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classblog-posts hfeed>          div classdate-outer>        h2 classdate-header>span>Tuesday, December 23, 2025/span>/h2>          div classdate-posts>        div classpost-outer>div classpost hentry uncustomized-post-template itempropblogPost itemscopeitemscope itemtypehttp://schema.org/BlogPosting>meta contenthttps://blogger.googleusercontent.com/img/a/AVvXsEgR4vpmM0VxyO3a14UzDak_l9qc1WEgn3ik2IWhcdahaDQqDqzR7LPtKJeHjPm0vNXQUad9R4SmvzeqwPzmHJ8l_VbUUWSZk9YOIK5UumE7ZVF8YggUOUEUnksf08zjiAaLHVUmr-ro-QWBdBZ0FdFjty4kKod8fDBWYLaSy50AylgiTiGsUUHqAFE6TLgw640-h460 itempropimage_url/>meta content568392849289927853 itempropblogId/>meta content5228608481358294154 itemproppostId/>a name5228608481358294154>/a>h3 classpost-title entry-title itempropname>a hrefhttps://www.blog.baldengineering.com/2025/12/atomic-layer-etching-as-scaling-enabler.html>Atomic Layer Etching as a Scaling Enabler: From Isotropic Chemistry to Selective, Directional, and Geometry-Driven Patterning/a>/h3>div classpost-header>div classpost-header-line-1>/div>/div>div classpost-body entry-content idpost-body-5228608481358294154 itemproparticleBody>p styletext-align: justify;>Continued scaling in semiconductor manufacturing increasingly relies on atomic-scale control of etching for complex 3D material stacks, making patterning precision a growing industrial bottleneck. Atomic layer etching (ALE) has emerged as a key enabler, with plasma-driven anisotropy and surface-chemistry control allowing improved selectivity and profile fidelity for advanced logic and memory integration. Current approaches emphasize decoupling surface modification from material removal to enable low-temperature, highly controlled processes./p>p styletext-align: justify;>From an industry perspective, the focus is shifting toward systematic ALE process development frameworks that combine thermodynamic screening, tailored half-cycle chemistries, and experimental verification of etch rates and selectivity. These strategies are increasingly relevant as device architectures push beyond conventional materials and dimensions. At the same time, ALE is gaining attention for its potential to reduce process complexity, energy use, and chemical consumption, positioning it as both a scaling and sustainability enabler for future semiconductor manufacturing./p>div styletext-align: justify;>In a recent paper by Smith et al (reference below), Thermal ALE is described as a purely chemical, vapor- or gas-phase process in which both the surface modification and removal steps are self-limiting and thermally activated. Volatile products are typically formed through ligand-exchange reactions that generate metalorganics. Because no ions are involved, this mode of ALE is intrinsically isotropic, leading to uniform material removal in all directions. This makes thermal ALE attractive for conformal trimming, lateral recessing, and highly selective etches, but fundamentally limits its ability to produce vertical, profile-controlled features./div>p styletext-align: justify;>/p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/a/AVvXsEgR4vpmM0VxyO3a14UzDak_l9qc1WEgn3ik2IWhcdahaDQqDqzR7LPtKJeHjPm0vNXQUad9R4SmvzeqwPzmHJ8l_VbUUWSZk9YOIK5UumE7ZVF8YggUOUEUnksf08zjiAaLHVUmr-ro-QWBdBZ0FdFjty4kKod8fDBWYLaSy50AylgiTiGsUUHqAFE6TLg stylemargin-left: 1em; margin-right: 1em;>img alt data-original-height493 data-original-width685 height460 loadinglazy srchttps://blogger.googleusercontent.com/img/a/AVvXsEgR4vpmM0VxyO3a14UzDak_l9qc1WEgn3ik2IWhcdahaDQqDqzR7LPtKJeHjPm0vNXQUad9R4SmvzeqwPzmHJ8l_VbUUWSZk9YOIK5UumE7ZVF8YggUOUEUnksf08zjiAaLHVUmr-ro-QWBdBZ0FdFjty4kKod8fDBWYLaSy50AylgiTiGsUUHqAFE6TLgw640-h460 width640 />/a>/div>br />div styletext-align: justify;>i>span stylebackground-color: white; color: #222222; font-family: Merriweather, serif; font-size: 16px;>(/span>span stylebackground-color: white; box-sizing: inherit; color: #222222; font-family: Merriweather, serif; font-size: 16px; font-weight: bolder;>a/span>span stylebackground-color: white; color: #222222; font-family: Merriweather, serif; font-size: 16px;>) Periodic table of the elements showing which metals, metal oxides, and metal nitrides have had ALE processes developed for them. In developing a new ALE process, determining the nature of the volatile etch product is critical, with some metals proving more favorable to etching via the formation of volatile metalorganics and others via volatile metal halides. Data compiled from the ALE Database /span>a aria-labelReference 15 data-testcitation-ref data-trackclick data-track-actionreference anchor data-track-labellink hrefhttps://link.springer.com/article/10.1007/s11090-025-10629-1#ref-CR15 idref-link-section-d244824157e494 stylebackground-color: white; box-sizing: inherit; color: #025e8d; font-family: Merriweather, serif; font-size: 16px; padding: initial; scroll-margin-top: 74px; text-decoration-skip-ink: auto; text-decoration-thickness: 0.0625rem; text-underline-offset: 0.25rem; titleALE Database (2025)                   https://doi.org/10.6100/aledatabase                                  >reference/a>span stylebackground-color: white; color: #222222; font-family: Merriweather, serif; font-size: 16px;>. (/span>span stylebackground-color: white; box-sizing: inherit; color: #222222; font-family: Merriweather, serif; font-size: 16px; font-weight: bolder;>b/span>span stylebackground-color: white; color: #222222; font-family: Merriweather, serif; font-size: 16px;>) An outline of the pathways by which reported ALE processes can proceed. Metals, metal oxides, and metal nitrides can be halogenated, with the modified layer removed by subsequent Ar/span>sup stylebackground-color: white; box-sizing: inherit; color: #222222; font-family: Merriweather, serif;>+/sup>span stylebackground-color: white; color: #222222; font-family: Merriweather, serif; font-size: 16px;> sputtering or ligand exchange. Metals can be oxidized or nitrided, and the metal oxide or nitride subsequently etched. (/span>span stylebackground-color: white; box-sizing: inherit; color: #222222; font-family: Merriweather, serif; font-size: 16px; font-weight: bolder;>c/span>span stylebackground-color: white; color: #222222; font-family: Merriweather, serif; font-size: 16px;>) Gibbs free energy minimization and volatility diagram analysis can be used to theoretically screen possible etch processes. (/span>span stylebackground-color: white; box-sizing: inherit; color: #222222; font-family: Merriweather, serif; font-size: 16px; font-weight: bolder;>d/span>span stylebackground-color: white; color: #222222; font-family: Merriweather, serif; font-size: 16px;>) Various surfaces of Ni modified with (1) surface O, (2) mixed surface and subsurface O, and (3) subsurface O. The Gibbs free energy of reaction showed the importance of having an oxidized sublayer to achieve favorable thermodynamic etching. Adapted from ref /span>a aria-labelReference 16 data-testcitation-ref data-trackclick data-track-actionreference anchor data-track-labellink hrefhttps://link.springer.com/article/10.1007/s11090-025-10629-1#ref-CR16 idref-link-section-d244824157e509 stylebackground-color: white; box-sizing: inherit; color: #025e8d; font-family: Merriweather, serif; font-size: 16px; padding: initial; scroll-margin-top: 74px; text-decoration-skip-ink: auto; text-decoration-thickness: 0.0625rem; text-underline-offset: 0.25rem; titleSang X, Xia Y, Sautet P, Chang JP (2020) Atomic layer etching of metals with anisotropy, specificity, and selectivity. J Vac Sci Technol A 38(4):043005.                   https://doi.org/10.1116/6.0000225                                  >reference/a>span stylebackground-color: white; color: #222222; font-family: Merriweather, serif; font-size: 16px;>. (/span>span stylebackground-color: white; box-sizing: inherit; color: #222222; font-family: Merriweather, serif; font-size: 16px; font-weight: bolder;>e/span>span stylebackground-color: white; color: #222222; font-family: Merriweather, serif; font-size: 16px;>) Analysis of Gibbs free energy of reaction: nitridation of nickel could form metastable Ni/span>span stylebackground-color: white; bottom: -0.25em; box-sizing: inherit; color: #222222; font-family: Merriweather, serif; font-size: 12px; line-height: 0; position: relative; vertical-align: baseline;>3/span>span stylebackground-color: white; color: #222222; font-family: Merriweather, serif; font-size: 16px;>N, which can be etched through favorable reactions with formic acid, forming dimers of nickel formates. /span>by Smith et al (reference below)/i>/div>p>/p>p styletext-align: justify;>In contrast, plasma ALE introduces ions as an active control parameter, most commonly during the removal step. A plasma first forms a chemically modified surface layer, such as a halogenated or oxidized film, which is then selectively removed by directional ion bombardment within a narrow ALE energy window. The momentum of the ions provides anisotropy, enabling vertical etching with atomic-scale precision while suppressing continuous sputtering. This directionality comes at the cost of tighter process windows and increased sensitivity to ion-induced damage./p>p styletext-align: justify;>A hybrid plasma–thermal ALE approach is presented as a way to decouple anisotropy from volatilization chemistry. In this scheme, plasma exposure is used to directionally modify the surface or precisely control the thickness of the modified layer, while removal proceeds via isotropic, thermally driven ligand-exchange reactions. This allows anisotropy to be engineered through selective surface modification rather than sputtering alone. Overall, the key conclusion is that isotropic versus directional behavior in ALE is determined by how and where ions are used, not simply by whether the process is labeled thermal or plasma./p>p styletext-align: justify;>b>Comment on Geometry/b>/p>p styletext-align: justify;>From an industrial standpoint, atomic layer etching is emerging as a core patterning technology as device scaling shifts toward complex 3D architectures and heterogeneous material stacks where conventional plasma etching reaches its limits. Smith et al. highlight that future adoption will be driven by selective ALE, enabled by surface-chemistry engineering, controlled anisotropy, and precise balance between etching and deposition rather than brute-force sputtering. In this landscape, AlixLabs’ use of geometrical selectivity extends the ALE paradigm by exploiting feature pitch and local geometry as an additional selectivity axis, enabling pattern multiplication and critical dimension scaling without added lithography complexity. The convergence of chemical, directional, and geometrical selectivity positions ALE not as a niche technique, but as a scalable, cost- and sustainability-aligned solution for next-generation semiconductor manufacturing./p>p styletext-align: justify;>The relevance of these advances is underscored by their recent and upcoming exposure at major industry forums. Results demonstrating sub-10 nm, high-aspect-ratio patterning with APS™ were presented at the 248th Electrochemical Society (ECS) Meeting in October 2025, marking an important milestone in validating the technology on bulk silicon using mature lithography. This momentum continues at SPIE Advanced Lithography + Patterning 2026, where AlixLabs will present new APS™ results spanning nanoimprint lithography and simplified self-aligned quadruple patterning, including joint work with UMC. Together, these events signal APS™ and geometrically selective ALE moving from concept and lab validation toward broader industrial evaluation and integration./p>p styletext-align: justify;>br />/p>p styletext-align: justify;>br />/p>p>/p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/a/AVvXsEhJXuNoB841uTPKaT8r0P8_RoUzRVC_EFNmhYlFQCKFJh7HC5lC2Rbig1wHZOWLBZAlE50P3SVytQ9lluVdKD8S9e08Fw5o9Shmb_odTvC_Veo1e8ddN17PBYqZwIvSC7mt1R1ujfozvVAR4muARcx68nyGN7RFBFc2NBT_jSglc7wyZdkpgj_z0OE7JDE stylemargin-left: 1em; margin-right: 1em;>img alt data-original-height583 data-original-width1200 height310 loadinglazy srchttps://blogger.googleusercontent.com/img/a/AVvXsEhJXuNoB841uTPKaT8r0P8_RoUzRVC_EFNmhYlFQCKFJh7HC5lC2Rbig1wHZOWLBZAlE50P3SVytQ9lluVdKD8S9e08Fw5o9Shmb_odTvC_Veo1e8ddN17PBYqZwIvSC7mt1R1ujfozvVAR4muARcx68nyGN7RFBFc2NBT_jSglc7wyZdkpgj_z0OE7JDEw640-h310 width640 />/a>/div>br />div styletext-align: justify;>i>AlixLabs announced that Dr. Dmitry Suyatin, CIPO and Co-Founder, presented new APS™ (Atomic Layer Etching Pitch Splitting) results at the 248th ECS Meeting in Chicago (October 12–16, 2025), demonstrating high-aspect-ratio, narrow-fin patterning on bulk silicon with critical dimensions below 10 nm using standard 193-nm immersion lithography. The results reinforce APS™ as a viable path to advanced logic patterning without next-generation scanners, enabling reduced process complexity and cost. Supported by recent patent milestones and progress toward a beta tool planned for operation in fall 2026, APS™ is positioned to move from lab-scale validation toward production-grade refinement, aligning with AlixLabs’ goal of making advanced semiconductor manufacturing more accessible and sustainable./i>/div>div styletext-align: justify;>i>br />/i>/div>div styletext-align: justify;>a hrefhttps://blogger.googleusercontent.com/img/a/AVvXsEi8FjoUzBAeXkbmpdiA8jdZCndeqnUluPetiFjOyuw3wgqycetcJeBSTXcndsBxCl1jwbrc1DXL1drdfp3Yb4cripb0dOE7uH3_sc_0g9BJS4oWyDcWkoglGvI2LOsh4SUKerARqbZcOQIEYKPRQ4t2HBtkIbLOlWz0VzaIpxR6wHx-fNpa2qmtYjowsjk stylemargin-left: 1em; margin-right: 1em; text-align: center;>img alt data-original-height1027 data-original-width1536 height428 loadinglazy srchttps://blogger.googleusercontent.com/img/a/AVvXsEi8FjoUzBAeXkbmpdiA8jdZCndeqnUluPetiFjOyuw3wgqycetcJeBSTXcndsBxCl1jwbrc1DXL1drdfp3Yb4cripb0dOE7uH3_sc_0g9BJS4oWyDcWkoglGvI2LOsh4SUKerARqbZcOQIEYKPRQ4t2HBtkIbLOlWz0VzaIpxR6wHx-fNpa2qmtYjowsjkw640-h428 width640 />/a>/div>div styletext-align: justify;>i>br />/i>/div>div styletext-align: justify;>i>AlixLabs announced its participation at SPIE Advanced Lithography + Patterning in San Jose, where two abstracts by Reza Jafari Jam et al and Robin Athlé et al have been accepted for oral presentation, including one in collaboration with United Microelectronics Corporation (UMC). The presentations will showcase recent progress in APS™ (Atomic Layer Etching Pitch Splitting), demonstrating sub-13 nm half-pitch patterning on silicon and a simplified alternative to self-aligned quadruple patterning that delivers a 4× density increase using a streamlined three-step process. Together, the talks highlight APS™ as a precise, cost-effective, and more sustainable approach to advanced nano-patterning that reduces complexity compared with conventional multi-patterning schemes./i>/div>p>/p>p styletext-align: justify;>b>Reference:/b>/p>p styletext-align: justify;>a hrefhttps://www.alixlabs.com/news/>AlixLabs – News/a>/p>p styletext-align: justify;>Adapted from Smith, T. G. and Chang, J. P., em data-end691 data-start588>Atomic Layer Etching in Patterning Materials: Anisotropy, Selectivity, Specificity and Sustainability/em>, Plasma Chemistry and Plasma Processing, 46:9 (2026), © The Author(s) 2026. Published by Springer Nature and licensed under CC BY 4.0./p>div styletext-align: justify;>Smith, T. G., Chang, J. P., Atomic Layer Etching in Patterning Materials: Anisotropy, Selectivity, Specificity and Sustainability, Plasma Chemistry and Plasma Processing, 2026, 46:9./div>div styletext-align: justify;>a hrefhttps://link.springer.com/article/10.1007/s11090-025-10629-1>Atomic Layer Etching in Patterning Materials: Anisotropy, Selectivity, Specificity and Sustainability | Plasma Chemistry and Plasma Processing/a>/div>div styletext-align: justify;>br />/div>p>/p>div styleclear: both;>/div>/div>div classpost-footer>div classpost-footer-line post-footer-line-1>span classpost-author vcard>Posted byspan classfn itempropauthor itemscopeitemscope itemtypehttp://schema.org/Person>meta contenthttps://www.blogger.com/profile/09326073294896585855 itempropurl/>a classg-profile hrefhttps://www.blogger.com/profile/09326073294896585855 relauthor titleauthor profile>span itempropname>Jonas Sundqvist/span>/a>/span>/span>span classpost-timestamp>atmeta contenthttps://www.blog.baldengineering.com/2025/12/atomic-layer-etching-as-scaling-enabler.html itempropurl/>a classtimestamp-link hrefhttps://www.blog.baldengineering.com/2025/12/atomic-layer-etching-as-scaling-enabler.html relbookmark titlepermanent link>abbr classpublished itempropdatePublished title2025-12-23T08:12:00+01:00>8:12 AM/abbr>/a>/span>span classreaction-buttons>/span>span classpost-comment-link>a classcomment-link hrefhttps://www.blog.baldengineering.com/2025/12/atomic-layer-etching-as-scaling-enabler.html#comment-form onclick>No comments:  /a>/span>span classpost-backlinks post-comment-link>/span>span classpost-icons>span classitem-control blog-admin pid-232533098>a hrefhttps://www.blogger.com/post-edit.g?blogID568392849289927853&postID5228608481358294154&frompencil titleEdit Post>img alt classicon-action height18 srchttps://resources.blogblog.com/img/icon18_edit_allbkg.gif width18/>/a>/span>/span>div classpost-share-buttons goog-inline-block>a classgoog-inline-block share-button sb-email hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID5228608481358294154&targetemail target_blank titleEmail This>span classshare-button-link-text>Email This/span>/a>a classgoog-inline-block share-button sb-blog hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID5228608481358294154&targetblog onclickwindow.open(this.href, _blank, height270,width475); return false; target_blank titleBlogThis!>span classshare-button-link-text>BlogThis!/span>/a>a classgoog-inline-block share-button sb-twitter hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID5228608481358294154&targettwitter target_blank titleShare to X>span classshare-button-link-text>Share to X/span>/a>a classgoog-inline-block share-button sb-facebook hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID5228608481358294154&targetfacebook onclickwindow.open(this.href, _blank, height430,width640); return false; target_blank titleShare to Facebook>span classshare-button-link-text>Share to Facebook/span>/a>a classgoog-inline-block share-button sb-pinterest hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID5228608481358294154&targetpinterest target_blank titleShare to Pinterest>span classshare-button-link-text>Share to Pinterest/span>/a>/div>/div>div classpost-footer-line post-footer-line-2>span classpost-labels>Labels:a hrefhttps://www.blog.baldengineering.com/search/label/ALE%20-%20Atomic%20Layer%20Etching reltag>ALE - Atomic Layer Etching/a>,a hrefhttps://www.blog.baldengineering.com/search/label/EUV reltag>EUV/a>,a hrefhttps://www.blog.baldengineering.com/search/label/lithography reltag>lithography/a>,a hrefhttps://www.blog.baldengineering.com/search/label/multiple%20patterning reltag>multiple patterning/a>/span>/div>div classpost-footer-line post-footer-line-3>span classpost-location>/span>/div>/div>/div>/div>          /div>/div>                  div classdate-outer>        h2 classdate-header>span>Sunday, December 21, 2025/span>/h2>          div classdate-posts>        div classpost-outer>div classpost hentry uncustomized-post-template itempropblogPost itemscopeitemscope itemtypehttp://schema.org/BlogPosting>meta contenthttps://blogger.googleusercontent.com/img/a/AVvXsEh0iUdGLHIzWnCcoqSpAS6Q4c2xxYAaWbdFxddKm34PYX8NJc58kH_mQuy1bPGzO0dLn0IONwTF6S8bTH2fUhYGyuy8g-WHyWOXXRMtXzEqqQllygQuACpgJAksKDjAyM3hhe2zm_ddwu2MB0mrZOLSfiP-kZmpuG9C2WK6QwiqwJMkk439orckjW3Spu8w640-h571 itempropimage_url/>meta content568392849289927853 itempropblogId/>meta content6673607802622418472 itemproppostId/>a name6673607802622418472>/a>h3 classpost-title entry-title itempropname>a hrefhttps://www.blog.baldengineering.com/2025/12/intel-foundry-advances-future-logic.html>Intel Foundry Advances Future Logic Scaling with Manufacturable 2D Transistors and High NA EUV Integration/a>/h3>div classpost-header>div classpost-header-line-1>/div>/div>div classpost-body entry-content idpost-body-6673607802622418472 itemproparticleBody>p styletext-align: justify;>span classhover:entity-accent entity-underline inline cursor-pointer align-baseline>Intel Foundry/span> has demonstrated concrete momentum in de-risking 2D field-effect transistors as a future scaling path beyond silicon, through long-term collaboration with span classhover:entity-accent entity-underline inline cursor-pointer align-baseline>Imec/span>. Results presented at span classhover:entity-accent entity-underline inline cursor-pointer align-baseline>IEDM/span> show a world-first, 300 mm fab-compatible integration of key 2DFET modules, including source/drain contacts and gate stacks, using transition-metal dichalcogenide channels (WS₂ and MoS₂ for n-type, WSe₂ for p-type devices). The core innovation is a selective oxide etch applied to high-quality Intel-grown 2D layers capped with AlOx/HfO₂/SiO₂, enabling damascene-style top contacts while preserving the integrity of atomically thin channels. /p>p styletext-align: justify;>/p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/a/AVvXsEh0iUdGLHIzWnCcoqSpAS6Q4c2xxYAaWbdFxddKm34PYX8NJc58kH_mQuy1bPGzO0dLn0IONwTF6S8bTH2fUhYGyuy8g-WHyWOXXRMtXzEqqQllygQuACpgJAksKDjAyM3hhe2zm_ddwu2MB0mrZOLSfiP-kZmpuG9C2WK6QwiqwJMkk439orckjW3Spu8 stylemargin-left: 1em; margin-right: 1em;>img alt data-original-height740 data-original-width829 height571 loadinglazy srchttps://blogger.googleusercontent.com/img/a/AVvXsEh0iUdGLHIzWnCcoqSpAS6Q4c2xxYAaWbdFxddKm34PYX8NJc58kH_mQuy1bPGzO0dLn0IONwTF6S8bTH2fUhYGyuy8g-WHyWOXXRMtXzEqqQllygQuACpgJAksKDjAyM3hhe2zm_ddwu2MB0mrZOLSfiP-kZmpuG9C2WK6QwiqwJMkk439orckjW3Spu8w640-h571 width640 />/a>/div>i>Fab-compatible 2D FET process integration on 300 mm wafers, demonstrating selectively recessed oxide caps that enable damascene-style top contacts on WS₂, MoS₂, and WSe₂ channels, along with replacement-oxide gate stacks and interlayer-selective removal that scales gate CET from 2.5 nm to 1.5 nm. The work establishes manufacturable contact and gate modules as fundamental building blocks for future 2D transistor integration (IEDM Paper 10.1, Q. Smets et al.)./i>div>i>br />/i>/div>div>span styletext-align: justify;>By validating these processes in production-class integration flows, Intel Foundry is addressing two of the most critical barriers to 2D transistor adoption—contact resistance and gate integration—while enabling realistic benchmarking, modeling, and design pathfinding. This work showcases Intel Foundry’s strategy of emphasizing manufacturability early in research, positioning 2D transistors as a credible, scalable option for future logic nodes and stacked transistor architectures./span>i>br />/i>p>/p>p styletext-align: justify;>Fab-compatible 2D FET process integration demonstrated on 300 mm wafers. An imec-led research team reports new manufacturable process modules enabling scalable integration of 2D field-effect transistors in a 300 mm pilot line. Exploiting the strong chemical selectivity and anisotropic van der Waals structure of transition-metal dichalcogenides, the work demonstrates for the first time a selectively recessed oxide cap that enables damascene-style top contacts on monolayer WS₂, MoS₂, and multilayer WSe₂ channels, resulting in improved contact resistance. A replacement-oxide gate stack with scaled equivalent oxide thickness is also shown. In addition, a novel interlayer-selective removal process based on liquid intercalation reduces the top-gate capacitance-equivalent thickness from 2.5 nm to 1.5 nm. Together, these modules form fundamental building blocks for future 2D integration technologies. Top row: epitaxial TiN growth enabled by a 2D template (left, center) and chemical confirmation of a Ru top contact on a multilayer WSe₂ channel (right). Bottom row: schematic comparison of the baseline top-gate stack comprising interlayer, cap, and top-up oxides; full replacement-oxide process; and selective lateral interlayer removal from contact trenches. Based on Paper 10.1, “Selective Etch Process for Fab-Compatible Top Contacts, Replacement Oxide and Interlayer Removal in 2D FETs,” Q. Smets et al., presented at IEDM./p>p styletext-align: justify;>In parallel with its 2D transistor research, Intel Foundry has made significant progress in High Numerical Aperture EUV lithography as a cornerstone enabler for future device scaling. In close collaboration with ASML, Intel Foundry has completed acceptance testing of the TWINSCAN EXE:5200B, the most advanced High NA EUV scanner currently available. This system builds on the first-generation EXE:5000 platform while extending productivity to 175 wafers per hour and achieving overlay performance of 0.7 nm, metrics that are directly relevant to high-volume manufacturing rather than purely experimental use. Intel’s early access to High NA EUV, beginning with the first commercial installation in its Oregon R&D fab in 2023, positions the company as a lead development partner shaping how High NA lithography is qualified, integrated, and eventually deployed in production logic nodes./p>p styletext-align: justify;>/p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/a/AVvXsEgwfTQREXlB_fFAzh-Anfu9SYcHSsx7_LY83o6gr98K9FsuyncTC45KTexYrtOqnGQn0gnYRy3yEUCrUYQMz3o7wd3diYndJJFlMFpJvyK2br6xKZ2_2EEeLwRGO9b-VghDGmcZYRMjho4da6mk6Hk-eDDbGDIX3622IuUxjPgJVyOCXC4Ne1odvu6OAng stylemargin-left: 1em; margin-right: 1em;>img alt data-original-height666 data-original-width999 height426 loadinglazy srchttps://blogger.googleusercontent.com/img/a/AVvXsEgwfTQREXlB_fFAzh-Anfu9SYcHSsx7_LY83o6gr98K9FsuyncTC45KTexYrtOqnGQn0gnYRy3yEUCrUYQMz3o7wd3diYndJJFlMFpJvyK2br6xKZ2_2EEeLwRGO9b-VghDGmcZYRMjho4da6mk6Hk-eDDbGDIX3622IuUxjPgJVyOCXC4Ne1odvu6OAngw640-h426 width640 />/a>/div>br />div styletext-align: justify;>From a technology perspective, the EXE:5200B introduces several enabling innovations that are critical for advanced transistor architectures, including gate-all-around and future stacked devices. A higher-power EUV source supports practical exposure doses and improved resist process windows, helping control line edge and line width roughness at extremely small critical dimensions. A redesigned wafer stocker architecture improves lot logistics and thermal stability, which is especially important for multipass and multiexposure flows anticipated with High NA patterning. Finally, tighter alignment control reflects advances in stage mechanics, sensing, and environmental isolation, all of which become essential as overlay tolerances approach the sub-nanometer regime. For Intel Foundry customers, these capabilities translate into more flexible design rules, reduced reliance on complex multi-patterning schemes, fewer masks and process steps, and faster yield learning. Together, Intel’s High NA EUV progress and its 2D transistor integration work reflect a coherent strategy: pairing next-generation lithography with manufacturable device innovations to ensure that future scaling paths are both technically viable and production-ready./div>p>/p>p styletext-align: justify;>Sources:/p>p styletext-align: justify;>a hrefhttps://community.intel.com/t5/Blogs/Intel-Foundry/Systems-Foundry-for-the-AI-Era/How-Collaboration-in-High-NA-EUV-and-Transistor-R-D-Are-Shaping/post/1730050>How Collaboration in High NA EUV and Transistor R&D Are Shaping Future Waves of Device Innovation/a>/p>p styletext-align: justify;>a hrefhttps://iedm25.mapyourshow.com/8_0/sessions/session-details.cfm?ScheduleID54&utm_sourcechatgpt.com>IEEE IEDM 2025 | 10-1 | Selective Etch Process for Fab-compatible Top Contacts, Replacement Oxide and Interlayer Removal in 2D FETs/a>/p>/div>div styleclear: both;>/div>/div>div classpost-footer>div classpost-footer-line post-footer-line-1>span classpost-author vcard>Posted byspan classfn itempropauthor itemscopeitemscope itemtypehttp://schema.org/Person>meta contenthttps://www.blogger.com/profile/09326073294896585855 itempropurl/>a classg-profile hrefhttps://www.blogger.com/profile/09326073294896585855 relauthor titleauthor profile>span itempropname>Jonas Sundqvist/span>/a>/span>/span>span classpost-timestamp>atmeta contenthttps://www.blog.baldengineering.com/2025/12/intel-foundry-advances-future-logic.html itempropurl/>a classtimestamp-link hrefhttps://www.blog.baldengineering.com/2025/12/intel-foundry-advances-future-logic.html relbookmark titlepermanent link>abbr classpublished itempropdatePublished title2025-12-21T09:46:00+01:00>9:46 AM/abbr>/a>/span>span classreaction-buttons>/span>span classpost-comment-link>a classcomment-link hrefhttps://www.blog.baldengineering.com/2025/12/intel-foundry-advances-future-logic.html#comment-form onclick>No comments:  /a>/span>span classpost-backlinks post-comment-link>/span>span classpost-icons>span classitem-control blog-admin pid-232533098>a hrefhttps://www.blogger.com/post-edit.g?blogID568392849289927853&postID6673607802622418472&frompencil titleEdit Post>img alt classicon-action height18 srchttps://resources.blogblog.com/img/icon18_edit_allbkg.gif width18/>/a>/span>/span>div classpost-share-buttons goog-inline-block>a classgoog-inline-block share-button sb-email hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID6673607802622418472&targetemail target_blank titleEmail This>span classshare-button-link-text>Email This/span>/a>a classgoog-inline-block share-button sb-blog hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID6673607802622418472&targetblog onclickwindow.open(this.href, _blank, height270,width475); return false; target_blank titleBlogThis!>span classshare-button-link-text>BlogThis!/span>/a>a classgoog-inline-block share-button sb-twitter hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID6673607802622418472&targettwitter target_blank titleShare to X>span classshare-button-link-text>Share to X/span>/a>a classgoog-inline-block share-button sb-facebook hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID6673607802622418472&targetfacebook onclickwindow.open(this.href, _blank, height430,width640); return false; target_blank titleShare to Facebook>span classshare-button-link-text>Share to Facebook/span>/a>a classgoog-inline-block share-button sb-pinterest hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID6673607802622418472&targetpinterest target_blank titleShare to Pinterest>span classshare-button-link-text>Share to Pinterest/span>/a>/div>/div>div classpost-footer-line post-footer-line-2>span classpost-labels>Labels:a hrefhttps://www.blog.baldengineering.com/search/label/2d%20materials reltag>2d materials/a>,a hrefhttps://www.blog.baldengineering.com/search/label/EUV reltag>EUV/a>,a hrefhttps://www.blog.baldengineering.com/search/label/Imec reltag>Imec/a>,a hrefhttps://www.blog.baldengineering.com/search/label/Intel reltag>Intel/a>/span>/div>div classpost-footer-line post-footer-line-3>span classpost-location>/span>/div>/div>/div>/div>          /div>/div>                  div classdate-outer>        h2 classdate-header>span>Friday, December 12, 2025/span>/h2>          div classdate-posts>        div classpost-outer>div classpost hentry uncustomized-post-template itempropblogPost itemscopeitemscope itemtypehttp://schema.org/BlogPosting>meta contenthttps://blogger.googleusercontent.com/img/a/AVvXsEgviW5OM87I5-NC_Fvq0L4dVshctpOOU9oj9IMSeHBZl6jX3rVsPG5vhyht-yU4u8skv_a2sjEQEd_FYD48sZHmCjxNbUznVALV_uHl4_kj3AUrI-py4hYEg7pYVIBpCVYD8lQP0aaq1IzZ-nkEXXEXfnPbzTJwkGtmH8JP6_rGvaKplX6HRTFRFgkmrac itempropimage_url/>meta content568392849289927853 itempropblogId/>meta content8495792652883352516 itemproppostId/>a name8495792652883352516>/a>h3 classpost-title entry-title itempropname>a hrefhttps://www.blog.baldengineering.com/2025/12/nanexa-and-moderna-partner-on-ald-based.html>Nanexa and Moderna partner on ALD-based PharmaShell drug delivery platform in licensing deal with USD 3 million upfront payment/a>/h3>div classpost-header>div classpost-header-line-1>/div>/div>div classpost-body entry-content idpost-body-8495792652883352516 itemproparticleBody>p styletext-align: justify;>Nanexa and Moderna have entered into a license and option agreement covering the development of up to five undisclosed drug compounds using Nanexa’s PharmaShell® drug delivery platform. The agreement includes an upfront payment of USD 3 million to Nanexa, with the potential for up to USD 500 million in development and commercial milestone payments, as well as tiered single-digit royalties on future product sales. Moderna receives an immediate license for the first selected compound and holds options to license up to four additional compounds following preclinical evaluation./p>p styletext-align: justify;>/p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/a/AVvXsEgviW5OM87I5-NC_Fvq0L4dVshctpOOU9oj9IMSeHBZl6jX3rVsPG5vhyht-yU4u8skv_a2sjEQEd_FYD48sZHmCjxNbUznVALV_uHl4_kj3AUrI-py4hYEg7pYVIBpCVYD8lQP0aaq1IzZ-nkEXXEXfnPbzTJwkGtmH8JP6_rGvaKplX6HRTFRFgkmrac stylemargin-left: 1em; margin-right: 1em;>img alt data-original-height600 data-original-width870 height221 loadinglazy srchttps://blogger.googleusercontent.com/img/a/AVvXsEgviW5OM87I5-NC_Fvq0L4dVshctpOOU9oj9IMSeHBZl6jX3rVsPG5vhyht-yU4u8skv_a2sjEQEd_FYD48sZHmCjxNbUznVALV_uHl4_kj3AUrI-py4hYEg7pYVIBpCVYD8lQP0aaq1IzZ-nkEXXEXfnPbzTJwkGtmH8JP6_rGvaKplX6HRTFRFgkmrac width320 />/a>/div>div classseparator styleclear: both; text-align: center;>span stylefont-family: "Source Sans Pro", sans-serif; text-align: start;>blockquote>b>“We are excited to partner with Moderna, a pioneer and leader in the field of mRNA medicines, to explore the potential of our PharmaShell® platform and to support the development of improved products for Moderna,” said David Westberg, CEO of Nanexa. “This agreement underscores the versatility of PharmaShell and its potential to address key challenges in the delivery of advanced biologics.”/b>/blockquote>/span>/div>The collaboration focuses on evaluating PharmaShell®’s ability to improve release profiles and stability for Moderna’s compounds. PharmaShell® is based on atomic layer deposition (ALD) technology, enabling precise encapsulation of active pharmaceutical ingredients with controlled, long-acting release characteristics. The agreement highlights PharmaShell®’s applicability to advanced biologics and supports Nanexa’s strategy of combining internal development with partnerships and licensing to global pharmaceutical companies.p>/p>p styletext-align: justify;>b>Background on ALD and PharmaShell/b>/p>p styletext-align: justify;>Atomic Layer Deposition (ALD) is a thin-film deposition technique originally developed for the semiconductor industry, where it is used to create extremely uniform, conformal, and precisely controlled coatings at the atomic scale. ALD is based on sequential, self-limiting surface reactions, which allow film thickness and composition to be controlled with angstrom-level precision. Because the process produces highly uniform coatings even on complex, high–surface-area structures, ALD has increasingly been adopted in life sciences and pharmaceutical applications where consistency, stability, and reproducibility are critical./p>p styletext-align: justify;>/p>p styletext-align: justify;>PharmaShell® is Nanexa’s proprietary drug delivery technology that applies ALD to pharmaceuticals by encapsulating active pharmaceutical ingredients with an ultrathin, inorganic coating. This coating acts as a controlled diffusion barrier, enabling precisely tuned and long-acting release profiles while also improving product stability and protection of sensitive molecules. By adjusting coating thickness and material properties at the atomic level, PharmaShell® can be tailored to specific drugs and therapeutic needs, making it particularly well suited for advanced biologics and long-acting injectable formulations./p>p styletext-align: justify;>/p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/a/AVvXsEhc5ytg5Z3rt9mYwKZ21SRY54r5y6illP6G7saRz7TvLT8OcWKgqNAUpTgVD5lq-LGmPhK5xlFL0FhCGMAgZdM8u_zD-Np9HfubyLylGW6NV5ADtAvhHLPxeDZokPvswZXEI4jxc8R-4806GfZ8cNSvpBqDIgYTYgJKff7_nFkURTLFbAHAJx28wZJ7PNc stylemargin-left: 1em; margin-right: 1em;>img alt data-original-height559 data-original-width1169 height306 loadinglazy srchttps://blogger.googleusercontent.com/img/a/AVvXsEhc5ytg5Z3rt9mYwKZ21SRY54r5y6illP6G7saRz7TvLT8OcWKgqNAUpTgVD5lq-LGmPhK5xlFL0FhCGMAgZdM8u_zD-Np9HfubyLylGW6NV5ADtAvhHLPxeDZokPvswZXEI4jxc8R-4806GfZ8cNSvpBqDIgYTYgJKff7_nFkURTLFbAHAJx28wZJ7PNcw640-h306 width640 />/a>/div>p>/p>p>i>PharmaShell® is administered as a suspended injectable formulation containing API particles coated with an ultrathin ALD-based shell. After injection, the coating gradually dissolves in vivo, enabling controlled and sustained release of the active pharmaceutical ingredient into systemic circulation. The coating materials break down into ions that are naturally eliminated via urine and feces, allowing long-acting drug delivery using thin-gauge needles and low injection volumes./i>/p>div classseparator styleclear: both; text-align: center;>/div>p styletext-align: justify;>/p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/a/AVvXsEgtSZULIdf79i86WmCWnOMCYMpG7ie7Tcd-2KFNJ54V--kjp3HEU5N_QW9fXUQLG7nJGvpWbY-gN3YIcpYFCxwYaqqz9nTgJf09MScpXcQ4fCS7CtkFIfUGXCijtFyHqoxi7V95fdx9aa6zp6MWnPo21vR67RuYXCxhyB4GCkY6SWYqwoJHS1n55G1YK14 stylemargin-left: 1em; margin-right: 1em;>img alt data-original-height668 data-original-width1166 height366 loadinglazy srchttps://blogger.googleusercontent.com/img/a/AVvXsEgtSZULIdf79i86WmCWnOMCYMpG7ie7Tcd-2KFNJ54V--kjp3HEU5N_QW9fXUQLG7nJGvpWbY-gN3YIcpYFCxwYaqqz9nTgJf09MScpXcQ4fCS7CtkFIfUGXCijtFyHqoxi7V95fdx9aa6zp6MWnPo21vR67RuYXCxhyB4GCkY6SWYqwoJHS1n55G1YK14w640-h366 width640 />/a>/div>br />p>/p>p>i>PharmaShell® is created by applying ultrathin inorganic oxide coatings to API particles using atomic layer deposition (ALD). ALD is a gentle, gas-phase process operating under dry conditions near room temperature, making it suitable for sensitive molecules such as peptides and monoclonal antibodies. The nanometer-scale coating provides precise control of drug release while maintaining a very high drug load, with no need for post-process purification./i>/p>p>/p>div styletext-align: justify;>b>About Nanexa/b>/div>div styletext-align: justify;>Nanexa AB (publ) is a Swedish drug delivery company specializing in long-acting injectable formulations. Its proprietary PharmaShell® technology uses atomic layer deposition to precisely encapsulate drug substances, enabling tailored release profiles, improved stability, and potentially reduced dosing frequency./div>p>/p>p>/p>div styletext-align: justify;>b>About Moderna/b>/div>div styletext-align: justify;>Moderna, Inc. (Nasdaq: MRNA) is a biotechnology company known for pioneering mRNA-based medicines and vaccines. The company focuses on developing therapeutics and vaccines across infectious diseases, oncology, rare diseases, and immune-mediated conditions using its mRNA platform./div>div styletext-align: justify;>br />/div>div styletext-align: justify;>Sources:/div>div styletext-align: justify;>a hrefhttps://nanexa.com/mfn_news/nanexa-and-moderna-enter-into-license-and-option-agreement-for-the-development-of-pharmashell-based-products/>Nanexa AB - Nanexa and Moderna enter into license and option agreement for the development of PharmaShell®-based products/a>/div>div styletext-align: justify;>a hrefhttps://nanexa.com/wp-content/uploads/2025/11/PODD-Oct-2025.pdf>PODD-Oct-2025.pdf/a>/div>p>/p>div styleclear: both;>/div>/div>div classpost-footer>div classpost-footer-line post-footer-line-1>span classpost-author vcard>Posted byspan classfn itempropauthor itemscopeitemscope itemtypehttp://schema.org/Person>meta contenthttps://www.blogger.com/profile/09326073294896585855 itempropurl/>a classg-profile hrefhttps://www.blogger.com/profile/09326073294896585855 relauthor titleauthor profile>span itempropname>Jonas Sundqvist/span>/a>/span>/span>span classpost-timestamp>atmeta contenthttps://www.blog.baldengineering.com/2025/12/nanexa-and-moderna-partner-on-ald-based.html itempropurl/>a classtimestamp-link hrefhttps://www.blog.baldengineering.com/2025/12/nanexa-and-moderna-partner-on-ald-based.html relbookmark titlepermanent link>abbr classpublished itempropdatePublished title2025-12-12T07:37:00+01:00>7:37 AM/abbr>/a>/span>span classreaction-buttons>/span>span classpost-comment-link>a classcomment-link hrefhttps://www.blog.baldengineering.com/2025/12/nanexa-and-moderna-partner-on-ald-based.html#comment-form onclick>No comments:  /a>/span>span classpost-backlinks post-comment-link>/span>span classpost-icons>span classitem-control blog-admin pid-232533098>a hrefhttps://www.blogger.com/post-edit.g?blogID568392849289927853&postID8495792652883352516&frompencil titleEdit Post>img alt classicon-action height18 srchttps://resources.blogblog.com/img/icon18_edit_allbkg.gif width18/>/a>/span>/span>div classpost-share-buttons goog-inline-block>a classgoog-inline-block share-button sb-email hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID8495792652883352516&targetemail target_blank titleEmail This>span classshare-button-link-text>Email This/span>/a>a classgoog-inline-block share-button sb-blog hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID8495792652883352516&targetblog onclickwindow.open(this.href, _blank, height270,width475); return false; target_blank titleBlogThis!>span classshare-button-link-text>BlogThis!/span>/a>a classgoog-inline-block share-button sb-twitter hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID8495792652883352516&targettwitter target_blank titleShare to X>span classshare-button-link-text>Share to X/span>/a>a classgoog-inline-block share-button sb-facebook hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID8495792652883352516&targetfacebook onclickwindow.open(this.href, _blank, height430,width640); return false; target_blank titleShare to Facebook>span classshare-button-link-text>Share to Facebook/span>/a>a classgoog-inline-block share-button sb-pinterest hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID8495792652883352516&targetpinterest target_blank titleShare to Pinterest>span classshare-button-link-text>Share to Pinterest/span>/a>/div>/div>div classpost-footer-line post-footer-line-2>span classpost-labels>Labels:a hrefhttps://www.blog.baldengineering.com/search/label/ALD%20-%20Atomic%20Layer%20Deposition reltag>ALD - Atomic Layer Deposition/a>,a hrefhttps://www.blog.baldengineering.com/search/label/Medical%20technology reltag>Medical technology/a>,a hrefhttps://www.blog.baldengineering.com/search/label/Nanexa reltag>Nanexa/a>/span>/div>div classpost-footer-line post-footer-line-3>span classpost-location>/span>/div>/div>/div>/div>          /div>/div>                  div classdate-outer>        h2 classdate-header>span>Tuesday, December 9, 2025/span>/h2>          div classdate-posts>        div classpost-outer>div classpost hentry uncustomized-post-template itempropblogPost itemscopeitemscope itemtypehttp://schema.org/BlogPosting>meta contenthttps://blogger.googleusercontent.com/img/a/AVvXsEhVCM6UGbDCUoCflmuu020xEx3cfFODmX9MuYIREOgmAyFSkzDo4Vk1K3lLFRi3xQkPbKTJLVz0_slyrytKY7Cawxr9SOP9J-MljBLfJBNrLoF278PwRuol-jY4G7PPsvMjs8tA0JJtNG0OJAu0AM3hvHVyZT_fcyxw-U2ffYIDN5bXE1_aa4-G1TXBW1Ew640-h521 itempropimage_url/>meta content568392849289927853 itempropblogId/>meta content547476258392353475 itemproppostId/>a name547476258392353475>/a>h3 classpost-title entry-title itempropname>a hrefhttps://www.blog.baldengineering.com/2025/12/capacitive-memory-built-on-tsmc-cmos.html>Capacitive memory built on a TSMC CMOS chip (reported in Nature)/a>/h3>div classpost-header>div classpost-header-line-1>/div>/div>div classpost-body entry-content idpost-body-547476258392353475 itemproparticleBody>p styletext-align: justify;>Researchers led by Junmo Lee from Georgia Institute of Technology in collaboration with Taiwan Semiconductor Manufacturing Company (TSMC) have demonstrated a new type of capacitive memory integrated directly on a CMOS chip. The work uses atomic layer deposition (ALD) and a dual-gated device architecture, pointing toward higher-density, low-power memory that can be integrated into advanced logic processes/p>p styletext-align: justify;>Junmo Lee and colleagues now report a dual-gated non-volatile capacitive memory fabricated on the top metal layer of a foundry CMOS chip. The fabrication process begins with the removal of the chip’s passivation layer, followed by the deposition and patterning of the bottom electrode and interconnects. A layer of hafnium zirconium oxide (HZO) is then deposited using a tungsten sacrificial layer, and a film of tungsten-doped indium oxide (In2O3) grown via atomic layer deposition. The process concludes with the formation of a palladium top electrode and back-end pads, followed by a hafnium oxide (HfO2) top dielectric and then a palladium top gate./p>p styletext-align: justify;>The device exhibits a capacitive on/off ratio of 63.1, endurance exceeding 109 cycles at a read voltage of 1 V and retention of above 104 s at 25 °C. The operational principle of the integrated two-transistor–one-capacitor (2T–1C) device was validated by demonstrating the current amplification behaviour of the capacitance-modulated 40-nm silicon transistor within the integrated structure. Based on the measured data, the researchers proposed and simulated a cell-level digital compute-in-memory circuit model./p>p styletext-align: justify;>/p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/a/AVvXsEhVCM6UGbDCUoCflmuu020xEx3cfFODmX9MuYIREOgmAyFSkzDo4Vk1K3lLFRi3xQkPbKTJLVz0_slyrytKY7Cawxr9SOP9J-MljBLfJBNrLoF278PwRuol-jY4G7PPsvMjs8tA0JJtNG0OJAu0AM3hvHVyZT_fcyxw-U2ffYIDN5bXE1_aa4-G1TXBW1E stylemargin-left: 1em; margin-right: 1em;>img alt data-original-height558 data-original-width685 height521 loadinglazy srchttps://blogger.googleusercontent.com/img/a/AVvXsEhVCM6UGbDCUoCflmuu020xEx3cfFODmX9MuYIREOgmAyFSkzDo4Vk1K3lLFRi3xQkPbKTJLVz0_slyrytKY7Cawxr9SOP9J-MljBLfJBNrLoF278PwRuol-jY4G7PPsvMjs8tA0JJtNG0OJAu0AM3hvHVyZT_fcyxw-U2ffYIDN5bXE1_aa4-G1TXBW1Ew640-h521 width640 />/a>/div>br />br />p>/p>p styletext-align: justify;>b>The study was also presented at IEDM2025: Technical Highlight – Monolithic 3D Capacitive Memory for Compute-in-Memory: /b>/p>p styletext-align: justify;>This joint work by Georgia Tech & TSMC, nominated for Best Student Paper in Emerging Device Technology, describes the first monolithic 3D (M3D) integration of dual-gated non-volatile capacitive memory (nvCAP) with an ALD W-doped In₂O₃ channel on a TSMC foundry 40nm CMOS chip. The novel dual-gate design resolves the long-standing challenges of weak erase and poor retention in oxide-channel ferroelectrics, achieving a record non-destructive on/off ratio of ~64.4 at 0V on a foundry CMOS chip. In addition, the paper introduces a new capacitive digital compute-in-memory (Cap-DCIM) paradigm, showing >140x efficiency improvements versus analog CIMs and >100x lower static power than SRAM-based CIMs, pointing to a scalable and energy-efficient path for future memory-compute integration. The operational principle of M3D Cap-DCIM is experimentally validated by demonstrating BEOL capacitance-modulated FEOL transistor current amplification through the monolithically integrated DG nvCAPs on a foundry CMOS chip./p>p styletext-align: justify;>Paper 28.3, “Monolithic 3D Integration of Dual-Gated ALD Oxide-Channel Non-Volatile Capacitive Memory on 40nm Si CMOS for Digital Compute-in-Memory,” J. Lee et al, Georgia Tech/p>p styletext-align: justify;>/p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/a/AVvXsEjChOAyQClsC_l45Jve97HcYp1dXrOHhYTe2xXVSVBz1N0qZqnojIBrtC4TTa7Z89_jmTWHd1-lkVNPWJpnVsH_xTFXYK1KGJDjSy2AKIuHSt2BMeU1D7JD-OG9_80IPs9w9aPmR2XVDeMVEp_f8IlTszh8stddbbv2_PHkb4v0mrdHsyauE272BJcDgR4 stylemargin-left: 1em; margin-right: 1em;>img alt data-original-height1084 data-original-width2048 height338 loadinglazy srchttps://blogger.googleusercontent.com/img/a/AVvXsEjChOAyQClsC_l45Jve97HcYp1dXrOHhYTe2xXVSVBz1N0qZqnojIBrtC4TTa7Z89_jmTWHd1-lkVNPWJpnVsH_xTFXYK1KGJDjSy2AKIuHSt2BMeU1D7JD-OG9_80IPs9w9aPmR2XVDeMVEp_f8IlTszh8stddbbv2_PHkb4v0mrdHsyauE272BJcDgR4w640-h338 width640 />/a>/div>br />br />p>/p>p styletext-align: justify;>Source: /p>p styletext-align: justify;>a hrefhttps://www.nature.com/articles/s41928-025-01533-9 styletext-align: left;>Capacitive memory built on a CMOS chip | Nature Electronics/a>/p>p styletext-align: justify;>a hrefhttps://iedm25.mapyourshow.com/8_0/sessions/session-details.cfm?ScheduleID203>IEEE IEDM 2025 | 28-3 | Monolithic 3D Integration of Dual-Gated ALD Oxide-Channel Non-Volatile Capacitive Memory on 40nm Si CMOS for Digital Compute-in-Memory/a>/p>div styleclear: both;>/div>/div>div classpost-footer>div classpost-footer-line post-footer-line-1>span classpost-author vcard>Posted byspan classfn itempropauthor itemscopeitemscope itemtypehttp://schema.org/Person>meta contenthttps://www.blogger.com/profile/09326073294896585855 itempropurl/>a classg-profile hrefhttps://www.blogger.com/profile/09326073294896585855 relauthor titleauthor profile>span itempropname>Jonas Sundqvist/span>/a>/span>/span>span classpost-timestamp>atmeta contenthttps://www.blog.baldengineering.com/2025/12/capacitive-memory-built-on-tsmc-cmos.html itempropurl/>a classtimestamp-link hrefhttps://www.blog.baldengineering.com/2025/12/capacitive-memory-built-on-tsmc-cmos.html relbookmark titlepermanent link>abbr classpublished itempropdatePublished title2025-12-09T07:09:00+01:00>7:09 AM/abbr>/a>/span>span classreaction-buttons>/span>span classpost-comment-link>a classcomment-link hrefhttps://www.blog.baldengineering.com/2025/12/capacitive-memory-built-on-tsmc-cmos.html#comment-form onclick>3 comments:  /a>/span>span classpost-backlinks post-comment-link>/span>span classpost-icons>span classitem-control blog-admin pid-232533098>a hrefhttps://www.blogger.com/post-edit.g?blogID568392849289927853&postID547476258392353475&frompencil titleEdit Post>img alt classicon-action height18 srchttps://resources.blogblog.com/img/icon18_edit_allbkg.gif width18/>/a>/span>/span>div classpost-share-buttons goog-inline-block>a classgoog-inline-block share-button sb-email hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID547476258392353475&targetemail target_blank titleEmail This>span classshare-button-link-text>Email This/span>/a>a classgoog-inline-block share-button sb-blog hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID547476258392353475&targetblog onclickwindow.open(this.href, _blank, height270,width475); return false; target_blank titleBlogThis!>span classshare-button-link-text>BlogThis!/span>/a>a classgoog-inline-block share-button sb-twitter hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID547476258392353475&targettwitter target_blank titleShare to X>span classshare-button-link-text>Share to X/span>/a>a classgoog-inline-block share-button sb-facebook hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID547476258392353475&targetfacebook onclickwindow.open(this.href, _blank, height430,width640); return false; target_blank titleShare to Facebook>span classshare-button-link-text>Share to Facebook/span>/a>a classgoog-inline-block share-button sb-pinterest hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID547476258392353475&targetpinterest target_blank titleShare to Pinterest>span classshare-button-link-text>Share to Pinterest/span>/a>/div>/div>div classpost-footer-line post-footer-line-2>span classpost-labels>Labels:a hrefhttps://www.blog.baldengineering.com/search/label/Emerging%20memory reltag>Emerging memory/a>,a hrefhttps://www.blog.baldengineering.com/search/label/ferroelectric reltag>ferroelectric/a>,a hrefhttps://www.blog.baldengineering.com/search/label/Logic reltag>Logic/a>,a hrefhttps://www.blog.baldengineering.com/search/label/TSMC reltag>TSMC/a>/span>/div>div classpost-footer-line post-footer-line-3>span classpost-location>/span>/div>/div>/div>/div>          /div>/div>                  div classdate-outer>        h2 classdate-header>span>Wednesday, November 12, 2025/span>/h2>          div classdate-posts>        div classpost-outer>div classpost hentry uncustomized-post-template itempropblogPost itemscopeitemscope itemtypehttp://schema.org/BlogPosting>meta contenthttps://blogger.googleusercontent.com/img/a/AVvXsEgDAkN_8Q11FNBLnWICbq3PM6hW4CXC9vJo4kHmyxK9UgGCKfqevLe2y8d5O-HwyXL2XnvXhXF-FeQXvg48tRefRLN0icWVj9MjQMVRuuo1ZcGxndbAXz4FDAuwzNkycVipWT_HlCm2Pd5Kdv5BLgbNfljQxOrRl-pl6IPWAtv2aEsTJRPw7icBfYJLTxcw640-h224 itempropimage_url/>meta content568392849289927853 itempropblogId/>meta content4903484288481994253 itemproppostId/>a name4903484288481994253>/a>h3 classpost-title entry-title itempropname>a hrefhttps://www.blog.baldengineering.com/2025/11/the-2026-area-selective-deposition.html>The 2026 Area Selective Deposition Workshop (ASD 2026)/a>/h3>div classpost-header>div classpost-header-line-1>/div>/div>div classpost-body entry-content idpost-body-4903484288481994253 itemproparticleBody>p styletext-align: justify;>The ASD Workshop was initiated in 2016 to provide a scientific communication channel to learn and exchange about selective deposition techniques. It has since offered a forum for open discussions between researchers from academia and industry. The meeting will include one day of Tutorials followed by the Workshop at ETEC Building (University at Albany). The last day of the workshop will highlight the state of the art of SC devices and processes at NY state with invited presentation from our main industrial partners at the NY CREATES’ Albany NanoTech Complex./p>p>/p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/a/AVvXsEgDAkN_8Q11FNBLnWICbq3PM6hW4CXC9vJo4kHmyxK9UgGCKfqevLe2y8d5O-HwyXL2XnvXhXF-FeQXvg48tRefRLN0icWVj9MjQMVRuuo1ZcGxndbAXz4FDAuwzNkycVipWT_HlCm2Pd5Kdv5BLgbNfljQxOrRl-pl6IPWAtv2aEsTJRPw7icBfYJLTxc stylemargin-left: 1em; margin-right: 1em;>img alt data-original-height539 data-original-width1540 height224 loadinglazy srchttps://blogger.googleusercontent.com/img/a/AVvXsEgDAkN_8Q11FNBLnWICbq3PM6hW4CXC9vJo4kHmyxK9UgGCKfqevLe2y8d5O-HwyXL2XnvXhXF-FeQXvg48tRefRLN0icWVj9MjQMVRuuo1ZcGxndbAXz4FDAuwzNkycVipWT_HlCm2Pd5Kdv5BLgbNfljQxOrRl-pl6IPWAtv2aEsTJRPw7icBfYJLTxcw640-h224 width640 />/a>/div>br />p>/p>p>span styletext-align: justify;>The 2026 Area Selective Deposition Workshop (ASD 2026) will take place March 29-April 1, 2026, at the University at Albany in New York, but it will be in two different locations:/span>/p>p>March 29-31, 2026: ETEC Building/p>p>April 1, 2026: NY CREATES’ Albany NanoTech Complex/p>p>/p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/a/AVvXsEhio7QeU1xoLL4m5s2z_1ZG7hV-ejBKxghyHojIkyVJPYXy9beGS6_1F7e9-T_nnxIc_OTSxJQDcLaa_u0KRf1giaO7gHe642iO2zGOreh5BkllsV8GUV_KN5m5BMbtmrd6bktWtZSvyjmIPf5MStHbzjHklzl7O5gyKV_GnQeEB8bvjhqoAAKQ8nNuT8g stylemargin-left: 1em; margin-right: 1em;>img alt data-original-height365 data-original-width982 height238 loadinglazy srchttps://blogger.googleusercontent.com/img/a/AVvXsEhio7QeU1xoLL4m5s2z_1ZG7hV-ejBKxghyHojIkyVJPYXy9beGS6_1F7e9-T_nnxIc_OTSxJQDcLaa_u0KRf1giaO7gHe642iO2zGOreh5BkllsV8GUV_KN5m5BMbtmrd6bktWtZSvyjmIPf5MStHbzjHklzl7O5gyKV_GnQeEB8bvjhqoAAKQ8nNuT8gw640-h238 width640 />/a>/div>br />br />p>/p>p>Abstract submission: a hrefhttps://asd2026.avs.org/abstract-submission/>Abstracts/a>/p>p>br />br />/p>div styleclear: both;>/div>/div>div classpost-footer>div classpost-footer-line post-footer-line-1>span classpost-author vcard>Posted byspan classfn itempropauthor itemscopeitemscope itemtypehttp://schema.org/Person>meta contenthttps://www.blogger.com/profile/09326073294896585855 itempropurl/>a classg-profile hrefhttps://www.blogger.com/profile/09326073294896585855 relauthor titleauthor profile>span itempropname>Jonas Sundqvist/span>/a>/span>/span>span classpost-timestamp>atmeta contenthttps://www.blog.baldengineering.com/2025/11/the-2026-area-selective-deposition.html itempropurl/>a classtimestamp-link hrefhttps://www.blog.baldengineering.com/2025/11/the-2026-area-selective-deposition.html relbookmark titlepermanent link>abbr classpublished itempropdatePublished title2025-11-12T06:41:00+01:00>6:41 AM/abbr>/a>/span>span classreaction-buttons>/span>span classpost-comment-link>a classcomment-link hrefhttps://www.blog.baldengineering.com/2025/11/the-2026-area-selective-deposition.html#comment-form onclick>2 comments:  /a>/span>span classpost-backlinks post-comment-link>/span>span classpost-icons>span classitem-control blog-admin pid-232533098>a hrefhttps://www.blogger.com/post-edit.g?blogID568392849289927853&postID4903484288481994253&frompencil titleEdit Post>img alt classicon-action height18 srchttps://resources.blogblog.com/img/icon18_edit_allbkg.gif width18/>/a>/span>/span>div classpost-share-buttons goog-inline-block>a classgoog-inline-block share-button sb-email hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID4903484288481994253&targetemail target_blank titleEmail This>span classshare-button-link-text>Email This/span>/a>a classgoog-inline-block share-button sb-blog hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID4903484288481994253&targetblog onclickwindow.open(this.href, _blank, height270,width475); return false; target_blank titleBlogThis!>span classshare-button-link-text>BlogThis!/span>/a>a classgoog-inline-block share-button sb-twitter hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID4903484288481994253&targettwitter target_blank titleShare to X>span classshare-button-link-text>Share to X/span>/a>a classgoog-inline-block share-button sb-facebook hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID4903484288481994253&targetfacebook onclickwindow.open(this.href, _blank, height430,width640); return false; target_blank titleShare to Facebook>span classshare-button-link-text>Share to Facebook/span>/a>a classgoog-inline-block share-button sb-pinterest hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID4903484288481994253&targetpinterest target_blank titleShare to Pinterest>span classshare-button-link-text>Share to Pinterest/span>/a>/div>/div>div classpost-footer-line post-footer-line-2>span classpost-labels>Labels:a hrefhttps://www.blog.baldengineering.com/search/label/ALD%20-%20Atomic%20Layer%20Deposition reltag>ALD - Atomic Layer Deposition/a>,a hrefhttps://www.blog.baldengineering.com/search/label/ALE%20-%20Atomic%20Layer%20Etching reltag>ALE - Atomic Layer Etching/a>,a hrefhttps://www.blog.baldengineering.com/search/label/ASD%20-%20Area%20Selective%20Deposition reltag>ASD - Area Selective Deposition/a>,a hrefhttps://www.blog.baldengineering.com/search/label/ASD2026 reltag>ASD2026/a>/span>/div>div classpost-footer-line post-footer-line-3>span classpost-location>/span>/div>/div>/div>/div>          /div>/div>                  div classdate-outer>        h2 classdate-header>span>Monday, November 10, 2025/span>/h2>          div classdate-posts>        div classpost-outer>div classpost hentry uncustomized-post-template itempropblogPost itemscopeitemscope itemtypehttp://schema.org/BlogPosting>meta contenthttps://blogger.googleusercontent.com/img/a/AVvXsEhGF8d8-r5iMWkRHZYqtYWbmgpf5vlJTYDFLZcUWIP2n86AxyZZxBb2MalnuiAw9Qa0Dru4jeBZ3LFqCqKT1UqdFDns28llRzspcxqPDNV2OdbwWJJbs2pIzayS-8FCMEb3TbgVJqxhBC2beG8ni963UmoY1b4_sAvs69vmYJ0V6Ppi_JvWx_zvUtc-_H0w640-h100 itempropimage_url/>meta content568392849289927853 itempropblogId/>meta content1408425376316896410 itemproppostId/>a name1408425376316896410>/a>h3 classpost-title entry-title itempropname>a hrefhttps://www.blog.baldengineering.com/2025/11/samsung-researchers-achieve-near.html>Samsung Researchers Achieve Near-Perfect Grain Orientation in Atomic Layer Deposited Ruthenium for Next-Generation Interconnects/a>/h3>div classpost-header>div classpost-header-line-1>/div>/div>div classpost-body entry-content idpost-body-1408425376316896410 itemproparticleBody>p styletext-align: justify;>Researchers at the Samsung Advanced Institute of Technology (SAIT) have unveiled a breakthrough in interconnect materials at IEDM 2025 with their paper “Grain-Orientation-Engineering of Atomic Layer Deposited Ruthenium Interconnect Technology.” As semiconductor scaling pushes below 10 nm, conventional copper wiring faces mounting resistance and reliability challenges. The SAIT team demonstrated that ruthenium (Ru), deposited via atomic layer deposition (ALD), can serve as a superior alternative by precisely controlling its crystallographic orientation. Through tailored ALD cycles, they achieved more than 99 percent texture quality in Ru films deposited on amorphous underlayers—an unprecedented level of structural order that dramatically reduces electron scattering at grain boundaries./p>p styletext-align: justify;>/p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/a/AVvXsEhGF8d8-r5iMWkRHZYqtYWbmgpf5vlJTYDFLZcUWIP2n86AxyZZxBb2MalnuiAw9Qa0Dru4jeBZ3LFqCqKT1UqdFDns28llRzspcxqPDNV2OdbwWJJbs2pIzayS-8FCMEb3TbgVJqxhBC2beG8ni963UmoY1b4_sAvs69vmYJ0V6Ppi_JvWx_zvUtc-_H0 stylemargin-left: 1em; margin-right: 1em;>img alt data-original-height111 data-original-width711 height100 loadinglazy srchttps://blogger.googleusercontent.com/img/a/AVvXsEhGF8d8-r5iMWkRHZYqtYWbmgpf5vlJTYDFLZcUWIP2n86AxyZZxBb2MalnuiAw9Qa0Dru4jeBZ3LFqCqKT1UqdFDns28llRzspcxqPDNV2OdbwWJJbs2pIzayS-8FCMEb3TbgVJqxhBC2beG8ni963UmoY1b4_sAvs69vmYJ0V6Ppi_JvWx_zvUtc-_H0w640-h100 width640 />/a>/div>br />The study introduces a “supercycle-based area-selective deposition” approach that enables bottom-up via filling, producing c-axis-oriented single-crystal Ru vias. This method not only delivers void-free filling in narrow, high-aspect-ratio structures but also supports excellent conformality, making it highly compatible with advanced three-dimensional BEOL (back-end-of-line) architectures. By demonstrating atomic-scale control over film orientation and growth direction, the researchers show how ALD Ru can overcome the resistivity limitations of conventional PVD methods and outperform Cu in nanoscale interconnect applications.p>/p>p styletext-align: justify;>/p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/a/AVvXsEgFOHDQK0Ze0Rcp_WMLdMiPsnbVQl6YAnTZdkmONoN6EtoOTU9gG5KhrmTLJxmW-E_z_h-95uwIAYSszm8amZEGvorcuNbJ7a0ZHdKbhXreSn_ZKr8vpjfnmsMNSC7mkJ89sBLxpW3NDNJ33172UKhCw5dQxUEyVXv9Gy7NSr96ZKbmLZtqJ_qDY184Z6g stylemargin-left: 1em; margin-right: 1em;>img alt data-original-height315 data-original-width512 height197 loadinglazy srchttps://blogger.googleusercontent.com/img/a/AVvXsEgFOHDQK0Ze0Rcp_WMLdMiPsnbVQl6YAnTZdkmONoN6EtoOTU9gG5KhrmTLJxmW-E_z_h-95uwIAYSszm8amZEGvorcuNbJ7a0ZHdKbhXreSn_ZKr8vpjfnmsMNSC7mkJ89sBLxpW3NDNJ33172UKhCw5dQxUEyVXv9Gy7NSr96ZKbmLZtqJ_qDY184Z6gw320-h197 width320 />/a>/div>br />p>/p>p styletext-align: justify;>Beyond resistivity improvements, the findings have broader implications for the semiconductor industry’s transition toward Ru-based interconnect schemes. A highly oriented ALD Ru process could simplify integration by minimizing the need for thick diffusion barriers and improving electromigration resistance. The work reinforces ALD’s growing importance not just for conformal coatings but as an enabler of crystallographic precision at the atomic level. Samsung’s demonstration positions ruthenium as a front-runner for sub-10 nm and 3D interconnect nodes—bridging the gap between conventional BEOL metals and the emerging era of atomic-scale device engineering./p>p styletext-align: justify;>Sources: /p>p styletext-align: justify;>a hrefhttps://iedm25.mapyourshow.com/8_0/sessions/session-details.cfm?scheduleid250 styletext-align: left;>IEEE IEDM 2025 | 33-6 | Grain-Orientation-Engineering of Atomic Layer Deposited Ruthenium Interconnect Technology/a>/p>p styletext-align: justify;>a hrefhttps://semiconductor.samsung.com/sait/>SAIT | Samsung Semiconductor Global/a>/p>div styleclear: both;>/div>/div>div classpost-footer>div classpost-footer-line post-footer-line-1>span classpost-author vcard>Posted byspan classfn itempropauthor itemscopeitemscope itemtypehttp://schema.org/Person>meta contenthttps://www.blogger.com/profile/09326073294896585855 itempropurl/>a classg-profile hrefhttps://www.blogger.com/profile/09326073294896585855 relauthor titleauthor profile>span itempropname>Jonas Sundqvist/span>/a>/span>/span>span classpost-timestamp>atmeta contenthttps://www.blog.baldengineering.com/2025/11/samsung-researchers-achieve-near.html itempropurl/>a classtimestamp-link hrefhttps://www.blog.baldengineering.com/2025/11/samsung-researchers-achieve-near.html relbookmark titlepermanent link>abbr classpublished itempropdatePublished title2025-11-10T06:46:00+01:00>6:46 AM/abbr>/a>/span>span classreaction-buttons>/span>span classpost-comment-link>a classcomment-link hrefhttps://www.blog.baldengineering.com/2025/11/samsung-researchers-achieve-near.html#comment-form onclick>1 comment:  /a>/span>span classpost-backlinks post-comment-link>/span>span classpost-icons>span classitem-control blog-admin pid-232533098>a hrefhttps://www.blogger.com/post-edit.g?blogID568392849289927853&postID1408425376316896410&frompencil titleEdit Post>img alt classicon-action height18 srchttps://resources.blogblog.com/img/icon18_edit_allbkg.gif width18/>/a>/span>/span>div classpost-share-buttons goog-inline-block>a classgoog-inline-block share-button sb-email hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID1408425376316896410&targetemail target_blank titleEmail This>span classshare-button-link-text>Email This/span>/a>a classgoog-inline-block share-button sb-blog hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID1408425376316896410&targetblog onclickwindow.open(this.href, _blank, height270,width475); return false; target_blank titleBlogThis!>span classshare-button-link-text>BlogThis!/span>/a>a classgoog-inline-block share-button sb-twitter hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID1408425376316896410&targettwitter target_blank titleShare to X>span classshare-button-link-text>Share to X/span>/a>a classgoog-inline-block share-button sb-facebook hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID1408425376316896410&targetfacebook onclickwindow.open(this.href, _blank, height430,width640); return false; target_blank titleShare to Facebook>span classshare-button-link-text>Share to Facebook/span>/a>a classgoog-inline-block share-button sb-pinterest hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID1408425376316896410&targetpinterest target_blank titleShare to Pinterest>span classshare-button-link-text>Share to Pinterest/span>/a>/div>/div>div classpost-footer-line post-footer-line-2>span classpost-labels>Labels:a hrefhttps://www.blog.baldengineering.com/search/label/ALD%20-%20Atomic%20Layer%20Deposition reltag>ALD - Atomic Layer Deposition/a>,a hrefhttps://www.blog.baldengineering.com/search/label/ruthenium reltag>ruthenium/a>,a hrefhttps://www.blog.baldengineering.com/search/label/samsung reltag>samsung/a>/span>/div>div classpost-footer-line post-footer-line-3>span classpost-location>/span>/div>/div>/div>/div>div classpost-outer>div classpost hentry uncustomized-post-template itempropblogPost itemscopeitemscope itemtypehttp://schema.org/BlogPosting>meta contenthttps://blogger.googleusercontent.com/img/a/AVvXsEjemDW1M4riFf3Hr04cgGAoAzv73Em-MA64Zde82W8DyOrQuaV7xTc_zEjOedCVrNckrb1VTiEYKcbtu7a2gfNp5a9oczVMcmDmGdtWEmtXFu0kBbnxfgeNA2xegycfFPyh5qiLe21C8QHY6SZWh2Y00GR6bR-hB9IKQGFA_kUW-vCA7RWpYv0GzgcfkDMw509-h640 itempropimage_url/>meta content568392849289927853 itempropblogId/>meta content5148557742500249658 itemproppostId/>a name5148557742500249658>/a>h3 classpost-title entry-title itempropname>a hrefhttps://www.blog.baldengineering.com/2025/11/iedm2025-tutorial-atomic-layer.html>IEDM2025 Tutorial - Atomic layer deposited atomically thin In₂O₃ transistors for BEOL logic and memory applications/a>/h3>div classpost-header>div classpost-header-line-1>/div>/div>div classpost-body entry-content idpost-body-5148557742500249658 itemproparticleBody>p styletext-align: justify;>The IEDM 2025 T3 tutorial session titled “Atomic-layer-deposited atomically thin In₂O₃ transistors for BEOL logic and memory applications” will focus on recent progress in oxide semiconductor thin-film transistor (TFT) technologies designed for back-end-of-line (BEOL) 3D integration. The work is closely associated with Professor Peide (Peter) Ye’s group at Purdue University, which has been leading research on atomic-layer-deposited (ALD) indium oxide (In₂O₃) as a channel material for low-temperature, monolithically integrated logic and memory devices. The presentation will likely consolidate several years of development in ALD In₂O₃ transistors and ferroelectric field-effect transistors (Fe-FETs), demonstrating how these devices can be integrated above silicon CMOS layers in BEOL-compatible processes./p>p styletext-align: justify;>/p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/a/AVvXsEjemDW1M4riFf3Hr04cgGAoAzv73Em-MA64Zde82W8DyOrQuaV7xTc_zEjOedCVrNckrb1VTiEYKcbtu7a2gfNp5a9oczVMcmDmGdtWEmtXFu0kBbnxfgeNA2xegycfFPyh5qiLe21C8QHY6SZWh2Y00GR6bR-hB9IKQGFA_kUW-vCA7RWpYv0GzgcfkDM stylemargin-left: 1em; margin-right: 1em;>img alt data-original-height1070 data-original-width850 height640 loadinglazy srchttps://blogger.googleusercontent.com/img/a/AVvXsEjemDW1M4riFf3Hr04cgGAoAzv73Em-MA64Zde82W8DyOrQuaV7xTc_zEjOedCVrNckrb1VTiEYKcbtu7a2gfNp5a9oczVMcmDmGdtWEmtXFu0kBbnxfgeNA2xegycfFPyh5qiLe21C8QHY6SZWh2Y00GR6bR-hB9IKQGFA_kUW-vCA7RWpYv0GzgcfkDMw509-h640 width509 />/a>/div>div classseparator styleclear: both; text-align: center;>i>br />/i>/div>div classseparator styleclear: both; text-align: justify;>i>The image shows diagrams and data related to an indium oxide transistor with an 8 nm channel length. This research from Purdue University focuses on developing smaller and better-performing transistors using new material /i>a hrefhttps://engineering.purdue.edu/ECE/News/2022/new-material-advances-lead-to-smaller-and-better-performing-transistors styletext-align: left;>New material advances lead to smaller and better-performing transistors - Elmore Family School of Electrical and Computer Engineering - Purdue University/a>/div>br />div styletext-align: justify;>The main motivation behind this research is to develop semiconductors that can operate effectively within the stringent temperature constraints of BEOL processing, typically below 400°C. ALD In₂O₃ stands out because it can be deposited at 200–250°C, ensuring compatibility with existing copper and low-k interconnect layers. The ALD process provides atomically precise thickness control and excellent film uniformity, enabling channel layers as thin as 0.5–0.7 nm with smooth surfaces and strong electrostatic control. In₂O₃ also possesses a favorable charge neutrality level deep in the conduction band, which leads to high electron density and low contact resistance even in ultrathin configurations. Together, these characteristics make ALD In₂O₃ an attractive candidate for BEOL transistors, offering both scalability and manufacturability advantages over 2D materials or III–V semiconductors./div>p>/p>p styletext-align: justify;>In terms of device performance, ALD In₂O₃ transistors have achieved channel lengths as short as 8 nm with channel thicknesses under 1 nm, demonstrating on-currents of about 3 A/mm at 0.5 V and transconductance values near 1.5 S/mm. On/off current ratios exceeding 10⁷ have been reported, alongside good subthreshold slopes and uniformity across wafers. Planar BEOL-compatible TFT versions of these devices exhibit electron mobilities above 100 cm²/Vs and current densities exceeding 2 mA/µm at low operating voltages. Some experimental devices have also demonstrated radio-frequency performance with cutoff frequencies around 36 GHz in sub-1 V operation, highlighting their potential for low-power, high-performance logic circuits integrated on top of CMOS wafers./p>p styletext-align: justify;>The memory aspect of this research involves combining ALD In₂O₃ channels with ferroelectric HfZrO₂ (HZO) gate dielectrics to realize In₂O₃-based Fe-FETs. These devices achieve channel lengths as small as 7 nm and exhibit memory windows around 2.2 V, with retention projected beyond 10 years and endurance exceeding 10⁸ switching cycles. Importantly, these Fe-FETs are also fabricated entirely within BEOL-compatible temperature budgets. This enables their use as embedded non-volatile memories in monolithic 3D integration schemes or as building blocks for in-memory computing architectures. The combination of logic FETs and Fe-FETs based on the same material platform offers a streamlined approach to constructing stacked computing tiers with both logic and memory functionality./p>div styleclear: both;>/div>/div>div classpost-footer>div classpost-footer-line post-footer-line-1>span classpost-author vcard>Posted byspan classfn itempropauthor itemscopeitemscope itemtypehttp://schema.org/Person>meta contenthttps://www.blogger.com/profile/09326073294896585855 itempropurl/>a classg-profile hrefhttps://www.blogger.com/profile/09326073294896585855 relauthor titleauthor profile>span itempropname>Jonas Sundqvist/span>/a>/span>/span>span classpost-timestamp>atmeta contenthttps://www.blog.baldengineering.com/2025/11/iedm2025-tutorial-atomic-layer.html itempropurl/>a classtimestamp-link hrefhttps://www.blog.baldengineering.com/2025/11/iedm2025-tutorial-atomic-layer.html relbookmark titlepermanent link>abbr classpublished itempropdatePublished title2025-11-10T06:28:00+01:00>6:28 AM/abbr>/a>/span>span classreaction-buttons>/span>span classpost-comment-link>a classcomment-link hrefhttps://www.blog.baldengineering.com/2025/11/iedm2025-tutorial-atomic-layer.html#comment-form onclick>No comments:  /a>/span>span classpost-backlinks post-comment-link>/span>span classpost-icons>span classitem-control blog-admin pid-232533098>a hrefhttps://www.blogger.com/post-edit.g?blogID568392849289927853&postID5148557742500249658&frompencil titleEdit Post>img alt classicon-action height18 srchttps://resources.blogblog.com/img/icon18_edit_allbkg.gif width18/>/a>/span>/span>div classpost-share-buttons goog-inline-block>a classgoog-inline-block share-button sb-email hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID5148557742500249658&targetemail target_blank titleEmail This>span classshare-button-link-text>Email This/span>/a>a classgoog-inline-block share-button sb-blog hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID5148557742500249658&targetblog onclickwindow.open(this.href, _blank, height270,width475); return false; target_blank titleBlogThis!>span classshare-button-link-text>BlogThis!/span>/a>a classgoog-inline-block share-button sb-twitter hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID5148557742500249658&targettwitter target_blank titleShare to X>span classshare-button-link-text>Share to X/span>/a>a classgoog-inline-block share-button sb-facebook hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID5148557742500249658&targetfacebook onclickwindow.open(this.href, _blank, height430,width640); return false; target_blank titleShare to Facebook>span classshare-button-link-text>Share to Facebook/span>/a>a classgoog-inline-block share-button sb-pinterest hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID5148557742500249658&targetpinterest target_blank titleShare to Pinterest>span classshare-button-link-text>Share to Pinterest/span>/a>/div>/div>div classpost-footer-line post-footer-line-2>span classpost-labels>Labels:a hrefhttps://www.blog.baldengineering.com/search/label/ALD%20-%20Atomic%20Layer%20Deposition reltag>ALD - Atomic Layer Deposition/a>,a hrefhttps://www.blog.baldengineering.com/search/label/CMOS reltag>CMOS/a>/span>/div>div classpost-footer-line post-footer-line-3>span classpost-location>/span>/div>/div>/div>/div>          /div>/div>                  div classdate-outer>        h2 classdate-header>span>Saturday, November 8, 2025/span>/h2>          div classdate-posts>        div classpost-outer>div classpost hentry uncustomized-post-template itempropblogPost itemscopeitemscope itemtypehttp://schema.org/BlogPosting>meta contenthttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEg7YuuVY2D6xi3705rUq7lFQqRHkrHa0hCe2ddOdFKtMC2BACWV6uzYU6iitIkAiSEmtfR0UwifP3OpTucCtl5bf2eb1IFsHCrl0TfGFMNN-G6jbGcM0ECWp-7Yn9nnLtRSOei3NNeC6dp0K238FsEzhveDR9O06tJrMJy97MvzeA385dztEFDGczt3ex8/w640-h360/Applied-Kinex.jpg itempropimage_url/>meta content568392849289927853 itempropblogId/>meta content8919697555363970884 itemproppostId/>a name8919697555363970884>/a>h3 classpost-title entry-title itempropname>a hrefhttps://www.blog.baldengineering.com/2025/11/applied-materials-deepens-partnership.html>Applied Materials Deepens Partnership with Besi and Launches Kinex™ – the Industry’s First Fully Integrated Die-to-Wafer Hybrid Bonding System for Next-Gen AI and Memory Chips/a>/h3>div classpost-header>div classpost-header-line-1>/div>/div>div classpost-body entry-content idpost-body-8919697555363970884 itemproparticleBody>p styletext-align: justify;>Applied Materials announced it has acquired a 9% stake in BE Semiconductor Industries (Besi) to strengthen their ongoing collaboration on hybrid bonding technology for advanced semiconductor packaging. Building on a partnership that began in 2020, the two companies recently extended their agreement to co-develop the industry’s first fully integrated die-based hybrid bonding system—combining Applied’s front-end processing expertise with Besi’s precision die placement and assembly capabilities. Hybrid bonding, which connects chips through direct copper-to-copper interfaces, is key to improving performance, power efficiency, and cost in next-generation logic and memory chips powering AI applications. Applied emphasized the investment as a strategic, long-term commitment, made through market transactions without seeking board representation or additional share purchases./p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEg7YuuVY2D6xi3705rUq7lFQqRHkrHa0hCe2ddOdFKtMC2BACWV6uzYU6iitIkAiSEmtfR0UwifP3OpTucCtl5bf2eb1IFsHCrl0TfGFMNN-G6jbGcM0ECWp-7Yn9nnLtRSOei3NNeC6dp0K238FsEzhveDR9O06tJrMJy97MvzeA385dztEFDGczt3ex8/s800/Applied-Kinex.jpg imageanchor1 stylemargin-left: 1em; margin-right: 1em;>img border0 data-original-height450 data-original-width800 height360 loadinglazy srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEg7YuuVY2D6xi3705rUq7lFQqRHkrHa0hCe2ddOdFKtMC2BACWV6uzYU6iitIkAiSEmtfR0UwifP3OpTucCtl5bf2eb1IFsHCrl0TfGFMNN-G6jbGcM0ECWp-7Yn9nnLtRSOei3NNeC6dp0K238FsEzhveDR9O06tJrMJy97MvzeA385dztEFDGczt3ex8/w640-h360/Applied-Kinex.jpg width640 />/a>/div>br />p styletext-align: justify;>i>Applied Materials and BE Semiconductor Industries (Besi) have introduced span data-end888 data-start879>Kinex/span>, the industry’s first integrated die-to-wafer hybrid bonding system, engineered to deliver higher performance and lower power consumption for advanced logic and memory chips. The Kinex system unites all hybrid bonding steps — surface preparation, bonding, and metrology — within a single tool, offering tighter interconnect pitches, consistent bonding quality, and improved cycle times./i>/p>p styletext-align: justify;>/p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEjRYQu6fmN4uSsSeIYxE8bEzOyXIxW6i8HOeyrZi01r7TqT36VFflHXdMcIjGZ9XV_kGN3qdwF924kJt0BajNv5uwrx2J1ASoLKkYSCWqu56JsGIOtYxFYH0sRcFpJja9k8yo8w0AZp7AyeaGc8ByVMFfLCdotNNVeWcUEuSy0SJRU2KqwCqcod4YxlgMU/s300/applied-materials-kinex-bonding-system.png imageanchor1 stylemargin-left: 1em; margin-right: 1em;>img border0 data-original-height300 data-original-width292 height640 loadinglazy srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEjRYQu6fmN4uSsSeIYxE8bEzOyXIxW6i8HOeyrZi01r7TqT36VFflHXdMcIjGZ9XV_kGN3qdwF924kJt0BajNv5uwrx2J1ASoLKkYSCWqu56JsGIOtYxFYH0sRcFpJja9k8yo8w0AZp7AyeaGc8ByVMFfLCdotNNVeWcUEuSy0SJRU2KqwCqcod4YxlgMU/w623-h640/applied-materials-kinex-bonding-system.png width623 />/a>/div>i>The Kinex™ Bonding system is the industry’s first integrated die-to-wafer hybrid bonder. It enables production of higher performance, lower power advanced logic and memory chips by integrating all the critical hybrid bonding process steps into one system./i>p>/p>p styletext-align: justify;>Kinex is Applied Materials’ fully integrated hybrid bonding system, purpose-built for HVM environments. Co-developed with BE Semiconductor Industries N.V. (Besi), the industry leader in hybrid bonding, Kinex combines best-in-class bonding accuracy, advanced queue-time control, and exceptional system cleanliness. Its modular architecture supports many chiplets per module and integrates wet clean, plasma activation, and in-situ metrology for real-time overlay control. Kinex’s smart sequencer and AIx-powered software suite enable predictive maintenance, die-level traceability, and multi-binning capabilities. /p>p styletext-align: justify;>Kinex is optimized for a wide range of applications including 3D integrated circuits, HBM, co-packaged optics (CPO), and sensor integration. Its flexible configuration supports both single-layer and multi-layer bonding flows, with validated performance on silicon, III-V materials, and glass substrates. As the industry moves toward higher die counts and tighter interconnect pitches, Kinex’s roadmap includes enhanced bonding force capabilities, in-situ annealing, and expanded metrology integration. With its scalable design and deep ecosystem partnerships, Kinex is positioned to lead the next wave of innovation in die-to-wafer hybrid bonding, enabling the future of AI, HPC, and beyond./p>p styletext-align: justify;>b>Sources:/b>/p>p styletext-align: justify;>a hrefhttps://bits-chips.com/article/applied-becomes-major-shareholder-of-besi/>Applied becomes major shareholder of Besi - Bits&Chips/a>/p>p styletext-align: justify;>a hrefhttps://ir.appliedmaterials.com/news-releases/news-release-details/applied-materials-announces-strategic-investment-be>Applied Materials Announces a Strategic Investment in BE Semiconductor Industries | Applied Materials/a>/p>p styletext-align: justify;>a hrefhttps://www.appliedmaterials.com/us/en/product-library/kinex-integrated-die-to-wafer-hybrid-bonding-system.html>Kinex/a>/p>div styleclear: both;>/div>/div>div classpost-footer>div classpost-footer-line post-footer-line-1>span classpost-author vcard>Posted byspan classfn itempropauthor itemscopeitemscope itemtypehttp://schema.org/Person>meta contenthttps://www.blogger.com/profile/09326073294896585855 itempropurl/>a classg-profile hrefhttps://www.blogger.com/profile/09326073294896585855 relauthor titleauthor profile>span itempropname>Jonas Sundqvist/span>/a>/span>/span>span classpost-timestamp>atmeta contenthttps://www.blog.baldengineering.com/2025/11/applied-materials-deepens-partnership.html itempropurl/>a classtimestamp-link hrefhttps://www.blog.baldengineering.com/2025/11/applied-materials-deepens-partnership.html relbookmark titlepermanent link>abbr classpublished itempropdatePublished title2025-11-08T08:14:00+01:00>8:14 AM/abbr>/a>/span>span classreaction-buttons>/span>span classpost-comment-link>a classcomment-link hrefhttps://www.blog.baldengineering.com/2025/11/applied-materials-deepens-partnership.html#comment-form onclick>1 comment:  /a>/span>span classpost-backlinks post-comment-link>/span>span classpost-icons>span classitem-control blog-admin pid-232533098>a hrefhttps://www.blogger.com/post-edit.g?blogID568392849289927853&postID8919697555363970884&frompencil titleEdit Post>img alt classicon-action height18 srchttps://resources.blogblog.com/img/icon18_edit_allbkg.gif width18/>/a>/span>/span>div classpost-share-buttons goog-inline-block>a classgoog-inline-block share-button sb-email hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID8919697555363970884&targetemail target_blank titleEmail This>span classshare-button-link-text>Email This/span>/a>a classgoog-inline-block share-button sb-blog hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID8919697555363970884&targetblog onclickwindow.open(this.href, _blank, height270,width475); return false; target_blank titleBlogThis!>span classshare-button-link-text>BlogThis!/span>/a>a classgoog-inline-block share-button sb-twitter hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID8919697555363970884&targettwitter target_blank titleShare to X>span classshare-button-link-text>Share to X/span>/a>a classgoog-inline-block share-button sb-facebook hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID8919697555363970884&targetfacebook onclickwindow.open(this.href, _blank, height430,width640); return false; target_blank titleShare to Facebook>span classshare-button-link-text>Share to Facebook/span>/a>a classgoog-inline-block share-button sb-pinterest hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID8919697555363970884&targetpinterest target_blank titleShare to Pinterest>span classshare-button-link-text>Share to Pinterest/span>/a>/div>/div>div classpost-footer-line post-footer-line-2>span classpost-labels>Labels:a hrefhttps://www.blog.baldengineering.com/search/label/Applied%20Materials reltag>Applied Materials/a>/span>/div>div classpost-footer-line post-footer-line-3>span classpost-location>/span>/div>/div>/div>/div>          /div>/div>                  div classdate-outer>        h2 classdate-header>span>Monday, October 27, 2025/span>/h2>          div classdate-posts>        div classpost-outer>div classpost hentry uncustomized-post-template itempropblogPost itemscopeitemscope itemtypehttp://schema.org/BlogPosting>meta contenthttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEhGxkyjWtf7t61UpAvaMlAUyYEMHy6EMb2ofJHH-ndHUl5YbJzdXBxUNHedRhMGVuIO6tjz3esosebh5o7y3sqlXDI0dm1lK1O0UyDWbpYnm46TbOj0XwRRhWew9M8rnhRgkHM87z2CKdug-rzcB4Xchg_75-SYQDmzVgKwDkAwmUpnKga3pARIsVfit7k/w640-h342/KakaoTalk_20251023_092631385-800x428-1-800x428.png itempropimage_url/>meta content568392849289927853 itempropblogId/>meta content752888160802534947 itemproppostId/>a name752888160802534947>/a>h3 classpost-title entry-title itempropname>a hrefhttps://www.blog.baldengineering.com/2025/10/plasma-based-deposition-refines-ald-for.html>Plasma-Based Deposition Refines ALD for Next-Gen DRAM: 30% Higher k, 40× Lower Leakage/a>/h3>div classpost-header>div classpost-header-line-1>/div>/div>div classpost-body entry-content idpost-body-752888160802534947 itemproparticleBody>p styletext-align: justify;>Researchers from POSTECH and UNIST in Korea have unveiled a new atomic-layer process using plasma-based deposition (PDP) to significantly improve DRAM capacitors. This innovation addresses a critical challenge in semiconductor manufacturing: enhancing the performance of high-k dielectric materials without introducing defects that cause electrical leakage. The PDP process refines the deposition of aluminum-doped titanium dioxide (ATO), enabling better charge storage and stability for next-generation devices./p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEhGxkyjWtf7t61UpAvaMlAUyYEMHy6EMb2ofJHH-ndHUl5YbJzdXBxUNHedRhMGVuIO6tjz3esosebh5o7y3sqlXDI0dm1lK1O0UyDWbpYnm46TbOj0XwRRhWew9M8rnhRgkHM87z2CKdug-rzcB4Xchg_75-SYQDmzVgKwDkAwmUpnKga3pARIsVfit7k/s800/KakaoTalk_20251023_092631385-800x428-1-800x428.png imageanchor1 stylemargin-left: 1em; margin-right: 1em;>img border0 data-original-height428 data-original-width800 height342 loadinglazy srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEhGxkyjWtf7t61UpAvaMlAUyYEMHy6EMb2ofJHH-ndHUl5YbJzdXBxUNHedRhMGVuIO6tjz3esosebh5o7y3sqlXDI0dm1lK1O0UyDWbpYnm46TbOj0XwRRhWew9M8rnhRgkHM87z2CKdug-rzcB4Xchg_75-SYQDmzVgKwDkAwmUpnKga3pARIsVfit7k/w640-h342/KakaoTalk_20251023_092631385-800x428-1-800x428.png width640 />/a>/div>br />p styletext-align: justify;>The PDP technique introduces a controlled plasma treatment step after standard atomic layer deposition (ALD). By exposing the capacitor film to an argon/oxygen plasma, the process reorders the crystal lattice and fills oxygen vacancies—defects that typically cause instability and increased leakage currents in conventional ALD methods. This precise atomic-scale refinement is key to achieving superior performance./p>p styletext-align: justify;>The results of this breakthrough are highly promising, with the treated DRAM capacitors showing a roughly 30% higher dielectric constant and a nearly 40-fold reduction in leakage current compared to conventional methods. This enhances DRAM retention time, improves energy efficiency, and boosts overall device reliability. Beyond DRAM, this technology has potential applications for other next-gen electronic devices and energy storage systems./p>p styletext-align: justify;>Sources:/p>p styletext-align: justify;>a hrefhttps://www.miragenews.com/new-process-boosts-semiconductor-performance-1557957/>https://www.miragenews.com/new-process-boosts-semiconductor-performance-1557957//a>/p>p styletext-align: justify;>a hrefhttps://news.unist.ac.kr/researchers-develop-innovative-process-to-enhance-semiconductor-device-performance/?utm_sourcemiragenews&utm_mediummiragenews&utm_campaignnews>Researchers Develop Innovative Process to Enhance Semiconductor Device PerformanceUNIST News Center | UNIST News Center/a>/p>p styletext-align: justify;>br />/p>div styleclear: both;>/div>/div>div classpost-footer>div classpost-footer-line post-footer-line-1>span classpost-author vcard>Posted byspan classfn itempropauthor itemscopeitemscope itemtypehttp://schema.org/Person>meta contenthttps://www.blogger.com/profile/09326073294896585855 itempropurl/>a classg-profile hrefhttps://www.blogger.com/profile/09326073294896585855 relauthor titleauthor profile>span itempropname>Jonas Sundqvist/span>/a>/span>/span>span classpost-timestamp>atmeta contenthttps://www.blog.baldengineering.com/2025/10/plasma-based-deposition-refines-ald-for.html itempropurl/>a classtimestamp-link hrefhttps://www.blog.baldengineering.com/2025/10/plasma-based-deposition-refines-ald-for.html relbookmark titlepermanent link>abbr classpublished itempropdatePublished title2025-10-27T15:01:00+01:00>3:01 PM/abbr>/a>/span>span classreaction-buttons>/span>span classpost-comment-link>a classcomment-link hrefhttps://www.blog.baldengineering.com/2025/10/plasma-based-deposition-refines-ald-for.html#comment-form onclick>No comments:  /a>/span>span classpost-backlinks post-comment-link>/span>span classpost-icons>span classitem-control blog-admin pid-232533098>a hrefhttps://www.blogger.com/post-edit.g?blogID568392849289927853&postID752888160802534947&frompencil titleEdit Post>img alt classicon-action height18 srchttps://resources.blogblog.com/img/icon18_edit_allbkg.gif width18/>/a>/span>/span>div classpost-share-buttons goog-inline-block>a classgoog-inline-block share-button sb-email hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID752888160802534947&targetemail target_blank titleEmail This>span classshare-button-link-text>Email This/span>/a>a classgoog-inline-block share-button sb-blog hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID752888160802534947&targetblog onclickwindow.open(this.href, _blank, height270,width475); return false; target_blank titleBlogThis!>span classshare-button-link-text>BlogThis!/span>/a>a classgoog-inline-block share-button sb-twitter hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID752888160802534947&targettwitter target_blank titleShare to X>span classshare-button-link-text>Share to X/span>/a>a classgoog-inline-block share-button sb-facebook hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID752888160802534947&targetfacebook onclickwindow.open(this.href, _blank, height430,width640); return false; target_blank titleShare to Facebook>span classshare-button-link-text>Share to Facebook/span>/a>a classgoog-inline-block share-button sb-pinterest hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID752888160802534947&targetpinterest target_blank titleShare to Pinterest>span classshare-button-link-text>Share to Pinterest/span>/a>/div>/div>div classpost-footer-line post-footer-line-2>span classpost-labels>Labels:a hrefhttps://www.blog.baldengineering.com/search/label/ALD%20-%20Atomic%20Layer%20Deposition reltag>ALD - Atomic Layer Deposition/a>,a hrefhttps://www.blog.baldengineering.com/search/label/DRAM reltag>DRAM/a>,a hrefhttps://www.blog.baldengineering.com/search/label/High-k reltag>High-k/a>/span>/div>div classpost-footer-line post-footer-line-3>span classpost-location>/span>/div>/div>/div>/div>          /div>/div>                  div classdate-outer>        h2 classdate-header>span>Sunday, October 26, 2025/span>/h2>          div classdate-posts>        div classpost-outer>div classpost hentry uncustomized-post-template itempropblogPost itemscopeitemscope itemtypehttp://schema.org/BlogPosting>meta contenthttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEjlwmX-scVAnnRUgZe2j5piRveWCF0eKf4GLfU7CVvW-Mv-E2YePrHPPIYObqKbkTFmaR-nS5n5py28lqGaGL2SO1OnOoFaKGZ_vzhWcUnelH3iIweTsQ95vLrW-smcDqBKaC8py1SR6euMVBn84_nDW_Q744jFsQedidG-_SBYyTtmw06JBFB1Ka46ytM/w640-h360/20251014_AlixLabs_ECS-Chicago_JS_DS.png itempropimage_url/>meta content568392849289927853 itempropblogId/>meta content3530841673606139174 itemproppostId/>a name3530841673606139174>/a>h3 classpost-title entry-title itempropname>a hrefhttps://www.blog.baldengineering.com/2025/10/alixlabs-presents-har-narrow-fin.html> AlixLabs presents HAR narrow-fin patterning at ECS 248/a>/h3>div classpost-header>div classpost-header-line-1>/div>/div>div classpost-body entry-content idpost-body-3530841673606139174 itemproparticleBody>p styletext-align: justify;>AlixLabs is pleased to announce that Dr. Dmitry Suyatin, CIPO and Co-Founder, has presented the company’s latest advances in APS™ (Atomic Layer Etching Pitch Splitting) at the 248th Electrochemical Society (ECS) Meeting held in Chicago, October 12–16, 2025./p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEjlwmX-scVAnnRUgZe2j5piRveWCF0eKf4GLfU7CVvW-Mv-E2YePrHPPIYObqKbkTFmaR-nS5n5py28lqGaGL2SO1OnOoFaKGZ_vzhWcUnelH3iIweTsQ95vLrW-smcDqBKaC8py1SR6euMVBn84_nDW_Q744jFsQedidG-_SBYyTtmw06JBFB1Ka46ytM/s1280/20251014_AlixLabs_ECS-Chicago_JS_DS.png imageanchor1 stylemargin-left: 1em; margin-right: 1em;>img border0 data-original-height720 data-original-width1280 height360 loadinglazy srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEjlwmX-scVAnnRUgZe2j5piRveWCF0eKf4GLfU7CVvW-Mv-E2YePrHPPIYObqKbkTFmaR-nS5n5py28lqGaGL2SO1OnOoFaKGZ_vzhWcUnelH3iIweTsQ95vLrW-smcDqBKaC8py1SR6euMVBn84_nDW_Q744jFsQedidG-_SBYyTtmw06JBFB1Ka46ytM/w640-h360/20251014_AlixLabs_ECS-Chicago_JS_DS.png width640 />/a>/div>div styletext-align: justify;>During the session, Dr. Suyatin highlighted new experimental results demonstrating high-aspect-ratio (HAR), narrow-fin patterning on bulk silicon achieved using conventional immersion lithography at a 193-nanometer wavelength. These results further confirm the viability of APS™ as an innovative method for extending fine-pitch patterning capabilities using existing lithography infrastructure./div>p>/p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/a/AVvXsEg6cNQrtZ20zJzQygLaWgNHYizEVnIPYgiXqoYDpYX6G0LEuT4SXzyfRcv8TaIwApvbZS_oFsqAClegi1WUHQmrcRAFB5MJ2cwx4CnPRd317LRZEr1LWjYCRUI8J7n4Nkvj5GXe0arxW5VIs3l5fsQF0TwoemFECulVrvgaT_SHOq26xAioGC6AV3s6XsU stylemargin-left: 1em; margin-right: 1em;>img alt data-original-height583 data-original-width1200 height310 loadinglazy srchttps://blogger.googleusercontent.com/img/a/AVvXsEg6cNQrtZ20zJzQygLaWgNHYizEVnIPYgiXqoYDpYX6G0LEuT4SXzyfRcv8TaIwApvbZS_oFsqAClegi1WUHQmrcRAFB5MJ2cwx4CnPRd317LRZEr1LWjYCRUI8J7n4Nkvj5GXe0arxW5VIs3l5fsQF0TwoemFECulVrvgaT_SHOq26xAioGC6AV3s6XsUw640-h310 width640 />/a>/div>div styletext-align: justify;>br />/div>div styletext-align: justify;>By enabling advanced logic patterning without the need for next-generation scanners, APS™ offers a significant opportunity to reduce process complexity and cost, paving the way for broader access to advanced semiconductor manufacturing technologies./div>p>/p>p styletext-align: justify;>“These new APS™ results – demonstrating high-aspect-ratio narrow-fin (CD < 10 nm) patterning on bulk silicon – go hand in hand with our recent patent successes,” said Dmitry Suyatin, CIPO and Co-Founder of AlixLabs. “Together, they validate APS™ as both a technically sound and strategically protected innovation in semiconductor manufacturing. As we prepare to install our beta tool that will become operational in fall 2026, we’re excited to take APS™ from lab-scale to production-grade refinement. Each step brings us closer to making advanced logic manufacturing simpler, more accessible, and more cost-efficient for the global industry.”/p>p styletext-align: justify;>The advances presented at ECS reflect AlixLabs’ long-term mission to lower the threshold to advanced logic production, supporting a more sustainable, affordable, and globally accessible semiconductor ecosystem./p>p styletext-align: justify;>This research has been led by Dr. Dmitry Suyatin and Dr. Intu Sharma, whose work continues to push the boundaries of patterning innovation./p>p styletext-align: justify;>Source: a hrefhttps://www.alixlabs.com/2025/10/16/alixlabs-presents-har-narrow-fin-patterning-at-ecs-248/ styletext-align: left;>AlixLabs presents HAR narrow-fin patterning at ECS 248 – AlixLabs/a>/p>div styleclear: both;>/div>/div>div classpost-footer>div classpost-footer-line post-footer-line-1>span classpost-author vcard>Posted byspan classfn itempropauthor itemscopeitemscope itemtypehttp://schema.org/Person>meta contenthttps://www.blogger.com/profile/09326073294896585855 itempropurl/>a classg-profile hrefhttps://www.blogger.com/profile/09326073294896585855 relauthor titleauthor profile>span itempropname>Jonas Sundqvist/span>/a>/span>/span>span classpost-timestamp>atmeta contenthttps://www.blog.baldengineering.com/2025/10/alixlabs-presents-har-narrow-fin.html itempropurl/>a classtimestamp-link hrefhttps://www.blog.baldengineering.com/2025/10/alixlabs-presents-har-narrow-fin.html relbookmark titlepermanent link>abbr classpublished itempropdatePublished title2025-10-26T09:00:00+01:00>9:00 AM/abbr>/a>/span>span classreaction-buttons>/span>span classpost-comment-link>a classcomment-link hrefhttps://www.blog.baldengineering.com/2025/10/alixlabs-presents-har-narrow-fin.html#comment-form onclick>No comments:  /a>/span>span classpost-backlinks post-comment-link>/span>span classpost-icons>span classitem-control blog-admin pid-232533098>a hrefhttps://www.blogger.com/post-edit.g?blogID568392849289927853&postID3530841673606139174&frompencil titleEdit Post>img alt classicon-action height18 srchttps://resources.blogblog.com/img/icon18_edit_allbkg.gif width18/>/a>/span>/span>div classpost-share-buttons goog-inline-block>a classgoog-inline-block share-button sb-email hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID3530841673606139174&targetemail target_blank titleEmail This>span classshare-button-link-text>Email This/span>/a>a classgoog-inline-block share-button sb-blog hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID3530841673606139174&targetblog onclickwindow.open(this.href, _blank, height270,width475); return false; target_blank titleBlogThis!>span classshare-button-link-text>BlogThis!/span>/a>a classgoog-inline-block share-button sb-twitter hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID3530841673606139174&targettwitter target_blank titleShare to X>span classshare-button-link-text>Share to X/span>/a>a classgoog-inline-block share-button sb-facebook hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID3530841673606139174&targetfacebook onclickwindow.open(this.href, _blank, height430,width640); return false; target_blank titleShare to Facebook>span classshare-button-link-text>Share to Facebook/span>/a>a classgoog-inline-block share-button sb-pinterest hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID3530841673606139174&targetpinterest target_blank titleShare to Pinterest>span classshare-button-link-text>Share to Pinterest/span>/a>/div>/div>div classpost-footer-line post-footer-line-2>span classpost-labels>Labels:a hrefhttps://www.blog.baldengineering.com/search/label/ALE%20-%20Atomic%20Layer%20Etching reltag>ALE - Atomic Layer Etching/a>,a hrefhttps://www.blog.baldengineering.com/search/label/AlixLabs reltag>AlixLabs/a>,a hrefhttps://www.blog.baldengineering.com/search/label/lithography reltag>lithography/a>,a hrefhttps://www.blog.baldengineering.com/search/label/multiple%20patterning reltag>multiple patterning/a>/span>/div>div classpost-footer-line post-footer-line-3>span classpost-location>/span>/div>/div>/div>/div>          /div>/div>                  div classdate-outer>        h2 classdate-header>span>Wednesday, September 24, 2025/span>/h2>          div classdate-posts>        div classpost-outer>div classpost hentry uncustomized-post-template itempropblogPost itemscopeitemscope itemtypehttp://schema.org/BlogPosting>meta contenthttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEiwWFt7RtUYXbK3YOkes1i5wjM-dDhF-1H_mH_40qXl02YerAm4I6cqKfQl9Lc2Hu76zzqAEeneSOm9JyMX50Wh9dN0R5hh2XJ1xL8YBh5y7zZHQ80cCGHUW3pIbOUvHpnWMMJPtzxJEQYoIJsCDNN0_5NCyVUEFir6mP7lrEtCQ3ffrShPtHQVDlkasc8/w640-h330/Screenshot%202025-09-24%20055524.png itempropimage_url/>meta content568392849289927853 itempropblogId/>meta content7637215975630272723 itemproppostId/>a name7637215975630272723>/a>h3 classpost-title entry-title itempropname>a hrefhttps://www.blog.baldengineering.com/2025/09/asm-charts-future-of-ald-scaling.html>ASM Charts the Future of ALD: Scaling Innovation, Integration, and Intelligence Toward 2030 /a>/h3>div classpost-header>div classpost-header-line-1>/div>/div>div classpost-body entry-content idpost-body-7637215975630272723 itemproparticleBody>p styletext-align: justify;>ASM used its 2025 Investor Day to set a bold 2030 ambition of more than €5.7 billion revenue, operating margins above 30%, and free cash flow above €1 billion. The company has consolidated a leading position in ALD with over 55% market share in their segments they where they chose to compete and is scaling its Epi business from 12% in 2020 to 25% in 2024. ALD remains the central growth driver, with the market for single-wafer ALD expected to outpace overall wafer fab equipment and reach $5.1–6.1 billion by 2030, while Si Epi is forecast at $2.5–3.2 billion with a 9–13% CAGR. /p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEiwWFt7RtUYXbK3YOkes1i5wjM-dDhF-1H_mH_40qXl02YerAm4I6cqKfQl9Lc2Hu76zzqAEeneSOm9JyMX50Wh9dN0R5hh2XJ1xL8YBh5y7zZHQ80cCGHUW3pIbOUvHpnWMMJPtzxJEQYoIJsCDNN0_5NCyVUEFir6mP7lrEtCQ3ffrShPtHQVDlkasc8/s1452/Screenshot%202025-09-24%20055524.png stylemargin-left: 1em; margin-right: 1em;>img border0 data-original-height748 data-original-width1452 height330 loadinglazy srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEiwWFt7RtUYXbK3YOkes1i5wjM-dDhF-1H_mH_40qXl02YerAm4I6cqKfQl9Lc2Hu76zzqAEeneSOm9JyMX50Wh9dN0R5hh2XJ1xL8YBh5y7zZHQ80cCGHUW3pIbOUvHpnWMMJPtzxJEQYoIJsCDNN0_5NCyVUEFir6mP7lrEtCQ3ffrShPtHQVDlkasc8/w640-h330/Screenshot%202025-09-24%20055524.png width640 />/a>/div>div styletext-align: justify;>i>br />/i>/div>div styletext-align: justify;>i>The single-wafer ALD market is projected to grow strongly from about 3.0 billion dollars in 2024 to between 5.1 and 6.1 billion dollars by 2030, representing a 9–13 percent compound annual growth rate, outpacing the overall wafer fab equipment market, which is expected to grow at 6 percent annually from 110 billion dollars in 2024 to 155 billion dollars in 2030. This growth is driven by the increasing number of ALD layers required in leading-edge logic and foundry processes as well as in advanced DRAM, both in the cell and peripheral CMOS areas. By 2030, ASM aims to maintain a market share above 55 percent, sustaining its lead in logic and foundry while also expanding its position in memory./i>/div>p styletext-align: justify;>Node and memory inflections significantly expand ASM’s served markets, adding $400 million in their served available market from 3nm FinFET to 2nm GAA, and a further $450–500 million from 2nm to 1.4nm, while DRAM transitions contribute another $400–450 million. FEOL ALD layers grow fastest, with roughly 60% of ALD demand at 1.4nm coming from the transistor front end. In advanced packaging, a total available market of $11.5 billion by 2030 supports ASM’s plan to double its served available market to more than 30% of that market. /p>p styletext-align: justify;>/p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEiZkE4-KJ80pxvw5dFCqOgFyCVfyjofSAXA3rcuqbJrdA78bE4RMdsZeCpa71DMk6xsoMMgj8sXQ0g-AHdU7AT_SBA5SCN37GR0dW_sWV0FHLw5jlhx-LqlRZzhiMi3HCm-j_HG6iBvqRcsTFmfeAI05q7i6ZqeLX-ZWXPONOnJIBFy4uvDgLNW_ohOFlY/s1337/Screenshot%202025-09-24%20055211.png stylemargin-left: 1em; margin-right: 1em;>img border0 data-original-height757 data-original-width1337 height362 loadinglazy srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEiZkE4-KJ80pxvw5dFCqOgFyCVfyjofSAXA3rcuqbJrdA78bE4RMdsZeCpa71DMk6xsoMMgj8sXQ0g-AHdU7AT_SBA5SCN37GR0dW_sWV0FHLw5jlhx-LqlRZzhiMi3HCm-j_HG6iBvqRcsTFmfeAI05q7i6ZqeLX-ZWXPONOnJIBFy4uvDgLNW_ohOFlY/w640-h362/Screenshot%202025-09-24%20055211.png width640 />/a>/div>p styletext-align: justify;>Services are projected to grow at more than 12% CAGR through 2030, with half of revenues moving to outcome-based models and new “dry clean” refurbish technology delivering ~10× selectivity, ~5× part life, over 95% CO₂e reduction, and more than 2× cost-of-ownership benefits. /p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEhJelIdCx9t6BwepOuK5_cJXFon6eBhPHr8ynMSyiREuEu-m2r0SNIvXEwlWHaCWUoExLgMzu4ehLb-sDNb1i3_z0ZgtEI2PnjAVoDGX2f_C2NF7RA70s4DIGCr29qj71irn02klTR4nduF3sZ2bxVb8lhXB4Lo8CP4vtVA0B5fROzLhy0iGPUk_8_DeGY/s653/Screenshot%202025-09-24%20054921.png stylemargin-left: 1em; margin-right: 1em;>img border0 data-original-height581 data-original-width653 height356 loadinglazy srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEhJelIdCx9t6BwepOuK5_cJXFon6eBhPHr8ynMSyiREuEu-m2r0SNIvXEwlWHaCWUoExLgMzu4ehLb-sDNb1i3_z0ZgtEI2PnjAVoDGX2f_C2NF7RA70s4DIGCr29qj71irn02klTR4nduF3sZ2bxVb8lhXB4Lo8CP4vtVA0B5fROzLhy0iGPUk_8_DeGY/w400-h356/Screenshot%202025-09-24%20054921.png width400 />/a>/div>p>/p>br />p styletext-align: justify;>b>ASM also introduced its XP8E common platform integrating clean, treat, inhibit, and ALD steps for 2nm ASD flows, and highlighted AI/ML deployment in high-volume manufacturing for anomaly detection, predictive maintenance, and improved first-time-right performance./b>/p>p styletext-align: justify;>/p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEjEU0L282iqRW42a9EQgHkatF8JiRZj6-CLnp5Jne9na-MmgjhhPWLdh8NPzuNKSWCrhT4MplH98DKprD_vLIu-CdiauqLaVB_fg_lnE7RAiFIu1QmBwVigfVDvK7O9EbJMArQIRDeGmi1dD0B4NySf2G64ff1Hzdv4lNrAZbFbVIixIGBSJSb1gRjoQrI/s947/Screenshot%202025-09-24%20055014.png stylemargin-left: 1em; margin-right: 1em;>img border0 data-original-height472 data-original-width947 height318 loadinglazy srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEjEU0L282iqRW42a9EQgHkatF8JiRZj6-CLnp5Jne9na-MmgjhhPWLdh8NPzuNKSWCrhT4MplH98DKprD_vLIu-CdiauqLaVB_fg_lnE7RAiFIu1QmBwVigfVDvK7O9EbJMArQIRDeGmi1dD0B4NySf2G64ff1Hzdv4lNrAZbFbVIixIGBSJSb1gRjoQrI/w640-h318/Screenshot%202025-09-24%20055014.png width640 />/a>/div>br />b>br />/b>p>/p>p data-end810 data-start0>ASM’s XP8E common platform is positioned as a key enabler for the 2nm and beyond era, where Area-Selective Deposition and advanced integration schemes require multiple tightly coupled process steps. By bringing clean, treat, inhibit, and ALD into a single cluster, XP8E reduces wafer handling, shortens cycle times, and improves process control. This integration is critical for scaling as the number of ALD steps grows with each node, and it directly addresses challenges in pattern fidelity, defectivity, and variability that can otherwise undermine yield at 2nm. The platform is designed to be modular and flexible, so customers can configure it for different ASD and high-k/metal gate flows, while also benefiting from a common hardware base that simplifies fab operations, service, and parts management./p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEi4yQxl0ukGJzvASYMyPzRQ8GEGB5gKTyrrfy9PEQqHGS9UBvfoEE0zZnWqnUKvQEj9DKTKs1bug7I86J3UehhsYGS-1seNaWvaS2oTh2hjj7jIQMNnf9Q_AuWveBuxCD8Kt9UKbVjhtqpMCqjg2K8E01_KuCkzW3DUeeavohyQ39pxugB5B1w3O9Bx6dc/s593/Screenshot%202025-09-24%20055055.png stylemargin-left: 1em; margin-right: 1em;>img border0 data-original-height418 data-original-width593 height452 loadinglazy srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEi4yQxl0ukGJzvASYMyPzRQ8GEGB5gKTyrrfy9PEQqHGS9UBvfoEE0zZnWqnUKvQEj9DKTKs1bug7I86J3UehhsYGS-1seNaWvaS2oTh2hjj7jIQMNnf9Q_AuWveBuxCD8Kt9UKbVjhtqpMCqjg2K8E01_KuCkzW3DUeeavohyQ39pxugB5B1w3O9Bx6dc/w640-h452/Screenshot%202025-09-24%20055055.png width640 />/a>/div>br />p data-end810 data-start0>Alongside new hardware, ASM is embedding AI and machine learning capabilities into high-volume manufacturing. These tools enable real-time anomaly detection to flag subtle deviations in process behavior before they impact yield, and provide “top contributor” insights that help engineers rapidly identify root causes. Predictive maintenance, including ASM’s PM-Bot automation, improves precision and ensures higher first-time-right rates, cutting downtime and labor intensity. Over time, this creates a closed-loop system where data from thousands of wafers continuously refines process windows, stabilizes tool performance, and enhances cost-of-ownership. In combination, XP8E’s process integration and AI-driven control systems aim to deliver the repeatability, selectivity, and productivity gains required for the 2nm transition and future GAA nodes./p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEgyuSoCAF2pitQ6xLZQEVrICj8r1IN1BFwI4-MsPG-8ckqejYAFo70V0zSRjUbOsVEUpo6QUvWnYH-5NSaeEq3nAETBcY56t8-1o3o2FnAWAqqX6fEZ2Ice4KYcPiLSmfMks3t5vzFc4diOxRg250sa1GNiXFt4nbQ8rEA3JnSr8gCvr_h1IEaYdLyYOAE/s1452/Screenshot%202025-09-24%20055132.png stylemargin-left: 1em; margin-right: 1em;>img border0 data-original-height767 data-original-width1452 height338 loadinglazy srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEgyuSoCAF2pitQ6xLZQEVrICj8r1IN1BFwI4-MsPG-8ckqejYAFo70V0zSRjUbOsVEUpo6QUvWnYH-5NSaeEq3nAETBcY56t8-1o3o2FnAWAqqX6fEZ2Ice4KYcPiLSmfMks3t5vzFc4diOxRg250sa1GNiXFt4nbQ8rEA3JnSr8gCvr_h1IEaYdLyYOAE/w640-h338/Screenshot%202025-09-24%20055132.png width640 />/a>/div>br />p styletext-align: justify;>b>ASMs ALD History - from 1974 to 2024, 50+ years of ALD/b>/p>p styletext-align: justify;>The timeline highlights key milestones in the history of ALD and ASM’s leadership in the field. It begins in 1974 with Dr. Tuomo Suntola’s invention of ALD, followed by the founding of Microchemistry in Helsinki in 1987. ASM entered the scene in 1998 with the release of its first 200 mm Pulsar tool and strengthened its position by acquiring Microchemistry from Neste in 1999 and securing Sherman PEALD patents in 2000. Growth continued with the acquisition of Genitech in 2004. In 2008, ASM’s Pulsar tool was recognized as Product of the Year, cementing its reputation. More recently, ASM expanded its product portfolio with the introduction of the dual-chamber Synergis ALD system in 2018, the XP8 quad chamber module in 2019, and the Prominis ALD and XP8E platform in 2024. Strategic acquisitions, such as Reno Sub-Systems in 2022, further enhanced ASM’s technology base, illustrating a steady path of innovation and consolidation in ALD leadership over five decades./p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEjTXFNzIA2S7_o9YEmaA7N7akT-tLDlZzcDOapxA5i-31LS9cUuTctn8zz-etEUvYiJCoLAsaOWLSQ7T4v1edFaRGZ-B1wojRn32x3JHlkPkhJV0HuUEcGFz4sufrX-khcDgEOtXirF1UIidKzKLQ-Be3bnwxHLg6K_Guq0fEhmhAikGg-FcTyGe65yQNg/s1083/Screenshot%202025-09-24%20060248.png stylemargin-left: 1em; margin-right: 1em;>img border0 data-original-height577 data-original-width1083 height340 loadinglazy srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEjTXFNzIA2S7_o9YEmaA7N7akT-tLDlZzcDOapxA5i-31LS9cUuTctn8zz-etEUvYiJCoLAsaOWLSQ7T4v1edFaRGZ-B1wojRn32x3JHlkPkhJV0HuUEcGFz4sufrX-khcDgEOtXirF1UIidKzKLQ-Be3bnwxHLg6K_Guq0fEhmhAikGg-FcTyGe65yQNg/w640-h340/Screenshot%202025-09-24%20060248.png width640 />/a>/div>div classseparator styleclear: both; text-align: center;>p styletext-align: justify;>i>The timeline illustrates ASM’s journey in atomic layer deposition from its origins to modern platforms. ALD was invented by Dr. Tuomo Suntola in 1974, followed by the founding of Microchemistry in 1987. ASM entered the field with the release of its first 200 mm Pulsar tool in 1998, strengthened its position by acquiring Microchemistry from Neste in 1999 (Finland), and expanded its patent base with Sherman PEALD patents in 2000. Key milestones include the acquisition of Genitech (Korea) in 2004, industry recognition for Pulsar in 2008, the introduction of Synergis in 2018 and XP8 in 2019, and the acquisition of Reno Sub-Systems in 2022. Most recently, ASM launched the Prominis ALD and XP8E platform in 2024, underscoring more than 50 years of continuous innovation and leadership in ALD/i>./p>p styletext-align: justify;>The Finnish angle in ASM’s ALD story is both historic and ongoing. Atomic Layer Deposition was invented in Finland in 1974 by Dr. Tuomo Suntola, originally called Atomic Layer Epitaxy. The technology was developed at Microchemistry Ltd., a Finnish company founded in Helsinki in 1987 under Neste. When ASM acquired Microchemistry in 1999, they started gaining the pioneering ALD patents, know-how, and expertise that underpin its leadership today. Finland continues to play an active role through the University of Helsinki and ASM’s Chemical Innovation Group in Helsinki, where precursor chemistry and process research are carried out in close collaboration with Finnish scientists. In this way, Finland provided both the origin of ALD for ASM and remains an important innovation hub supporting ASM’s growth and leadership./p>/div>div classseparator styleclear: both; text-align: justify;>The ASM Pulsar “HIG source” for solids (or the solid precursor delivery subsystem) is a core enabler for ASM’s ability to use low-vapor-pressure solid precursors in ALD. The original innovation from ASM Microchemistry has been further developed over decades and is now still a key technology on the new platform for Molybdenum ALD seen below. It involves a heated sublimation mechanism (sometimes mounted close to or integrated with the reactor), controlled inert gas valves, purge isolation, and precise flux control to feed vapor from a solid into the ALD chamber. The architecture seeks to avoid cold spots or condensation and maintain consistent, controllable precursor delivery pulses./div>div classseparator styleclear: both; text-align: justify;>br />/div>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEiN6R8_VXWR2tkuJFWpaLNMUWiV-r8qKtkCc-RSnoqvC0uvPlmnAvse7Yj-dWpn-7Pn-2_xOpptGlbXzAEGb35Jc3apADz9P1EDl7UjmZEDVvuub9mGj02J6btsYm93XZVAERmNSnN16KDWfdXHkJ7CYQHVY1vquMsbad-tb9NNemMCzXSYDODxQQOjUzA/s4490/Picture1.png stylemargin-left: 1em; margin-right: 1em;>img border0 data-original-height1742 data-original-width4490 height248 loadinglazy srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEiN6R8_VXWR2tkuJFWpaLNMUWiV-r8qKtkCc-RSnoqvC0uvPlmnAvse7Yj-dWpn-7Pn-2_xOpptGlbXzAEGb35Jc3apADz9P1EDl7UjmZEDVvuub9mGj02J6btsYm93XZVAERmNSnN16KDWfdXHkJ7CYQHVY1vquMsbad-tb9NNemMCzXSYDODxQQOjUzA/w640-h248/Picture1.png width640 />/a>/div>br />div classseparator styleclear: both; text-align: justify;>span data-end130 data-start111>p>Genitech was a South Korean company specializing in plasma enhanced ALD and thin film deposition. ASM acquired the company in 2004 to expand its capabilities in plasma based processes and complement its existing thermal ALD portfolio. The acquisition gave ASM a stronger position in PEALD for applications such as high k dielectrics and metal gate stacks used in advanced logic and memory. Genitech’s technology was integrated into ASM’s Pulsar and subsequent platforms, helping establish ASM’s leadership in both thermal and plasma ALD./p>p data-end605 data-start88>ASM acquired span data-end121 data-start101>Reno Sub-Systems/span> in 2022. Reno is a US-based company specializing in span data-end225 data-start174>RF power delivery systems and matching networks/span> for plasma tools. Their solid-state RF technology is valued for faster response times, higher precision, and better process stability compared to legacy RF solutions. By integrating Reno’s subsystems into its platforms, ASM strengthened its capability in plasma-based ALD and PEALD, where fine RF control is critical for uniformity, repeatability, and advanced film properties./p>p data-end744 data-is-last-node data-is-only-node data-start607>/p>/span>/div>div classseparator styleclear: both; text-align: justify;>strong data-end130 data-start111>Future Outlook/strong>/div>div classseparator styleclear: both; text-align: justify;>b>br data-end133 data-start130 />/b>ASM ties its deposition processing capability to its tool portfolio—Pulsar, EmerALD, Synergis, Prominis, XP8E, and others—which are engineered with small-volume reactors, advanced plasma control, and integrated multi-step clustering (clean, treat, inhibit, deposit)./div>div classseparator styleclear: both; text-align: justify;>br />/div>div classseparator styleclear: both; text-align: justify;>Looking ahead, ASM is uniquely positioned to remain the clear leader in atomic layer deposition as the semiconductor industry advances to 2nm and beyond. The company’s deep history in ALD, dating back to Dr. Tuomo Suntola’s invention in 1974, has evolved into a robust technology portfolio that now commands more than 55 percent market share where ASM chooses to compete. /div>div classseparator styleclear: both; text-align: justify;>br />/div>div classseparator styleclear: both; text-align: justify;>With single-wafer ALD forecast to nearly double in size by 2030 and outpace overall wafer fab equipment growth, ASM is set to capture outsized value from both logic and memory inflections. Its proven expertise in solid source precursor delivery, trailing back to the the Pulsar HIG sublimation system and F120 Microchemistry research reactors, now expands to new material capabilities such as molybdenum ALD for advanced node metallization. At the same time, ASM is broadening its impact through the XP8E common platform, which integrates multiple critical steps into one cluster with embedded AI and machine learning into high-volume manufacturing for real-time control. ASM’s combination of process innovation, equipment integration, and data-driven intelligence places the company at the center of semiconductor scaling, ensuring its leadership in enabling Moore’s Law through the next decade./div>div classseparator styleclear: both; text-align: justify;>b>br />/b>/div>div classseparator styleclear: both; text-align: justify;>b>Sources:/b>/div>div classseparator styleclear: both; text-align: justify;>a hrefhttps://investorday.asm.com/>ASM InvestorDay 2025/a>/div>br />p styletext-align: justify;>br />/p>div styleclear: both;>/div>/div>div classpost-footer>div classpost-footer-line post-footer-line-1>span classpost-author vcard>Posted byspan classfn itempropauthor itemscopeitemscope itemtypehttp://schema.org/Person>meta contenthttps://www.blogger.com/profile/09326073294896585855 itempropurl/>a classg-profile hrefhttps://www.blogger.com/profile/09326073294896585855 relauthor titleauthor profile>span itempropname>Jonas Sundqvist/span>/a>/span>/span>span classpost-timestamp>atmeta contenthttps://www.blog.baldengineering.com/2025/09/asm-charts-future-of-ald-scaling.html itempropurl/>a classtimestamp-link hrefhttps://www.blog.baldengineering.com/2025/09/asm-charts-future-of-ald-scaling.html relbookmark titlepermanent link>abbr classpublished itempropdatePublished title2025-09-24T06:31:00+02:00>6:31 AM/abbr>/a>/span>span classreaction-buttons>/span>span classpost-comment-link>a classcomment-link hrefhttps://www.blog.baldengineering.com/2025/09/asm-charts-future-of-ald-scaling.html#comment-form onclick>1 comment:  /a>/span>span classpost-backlinks post-comment-link>/span>span classpost-icons>span classitem-control blog-admin pid-232533098>a hrefhttps://www.blogger.com/post-edit.g?blogID568392849289927853&postID7637215975630272723&frompencil titleEdit Post>img alt classicon-action height18 srchttps://resources.blogblog.com/img/icon18_edit_allbkg.gif width18/>/a>/span>/span>div classpost-share-buttons goog-inline-block>a classgoog-inline-block share-button sb-email hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID7637215975630272723&targetemail target_blank titleEmail This>span classshare-button-link-text>Email This/span>/a>a classgoog-inline-block share-button sb-blog hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID7637215975630272723&targetblog onclickwindow.open(this.href, _blank, height270,width475); return false; target_blank titleBlogThis!>span classshare-button-link-text>BlogThis!/span>/a>a classgoog-inline-block share-button sb-twitter hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID7637215975630272723&targettwitter target_blank titleShare to X>span classshare-button-link-text>Share to X/span>/a>a classgoog-inline-block share-button sb-facebook hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID7637215975630272723&targetfacebook onclickwindow.open(this.href, _blank, height430,width640); return false; target_blank titleShare to Facebook>span classshare-button-link-text>Share to Facebook/span>/a>a classgoog-inline-block share-button sb-pinterest hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID7637215975630272723&targetpinterest target_blank titleShare to Pinterest>span classshare-button-link-text>Share to Pinterest/span>/a>/div>/div>div classpost-footer-line post-footer-line-2>span classpost-labels>Labels:a hrefhttps://www.blog.baldengineering.com/search/label/ALD%20-%20Atomic%20Layer%20Deposition reltag>ALD - Atomic Layer Deposition/a>,a hrefhttps://www.blog.baldengineering.com/search/label/ALD%20Equipment reltag>ALD Equipment/a>,a hrefhttps://www.blog.baldengineering.com/search/label/ASMI reltag>ASMI/a>,a hrefhttps://www.blog.baldengineering.com/search/label/Semiconductor reltag>Semiconductor/a>/span>/div>div classpost-footer-line post-footer-line-3>span classpost-location>/span>/div>/div>/div>/div>          /div>/div>                  div classdate-outer>        h2 classdate-header>span>Tuesday, September 16, 2025/span>/h2>          div classdate-posts>        div classpost-outer>div classpost hentry uncustomized-post-template itempropblogPost itemscopeitemscope itemtypehttp://schema.org/BlogPosting>meta contenthttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEjkGbHOOhbcYSIgvCCXPcUaUV83q6sRBjmjQaAhIQpGUfVT2qZ_5SMUJWSXVY3VCrx-5VwFJwrhWiiECNsenx8AFkCCT6tdFJ3wideubjv4pqaGGp1Ao8jpScxy5zZ3HqwZ2X8oCEyGkrJfX2zOqHQEvafwWV9oX_7ZMr_PVX0COvdjUqf2aprZDKA3XJA/s320/JSR-LamResearch1.jpg itempropimage_url/>meta content568392849289927853 itempropblogId/>meta content124907048765482335 itemproppostId/>a name124907048765482335>/a>h3 classpost-title entry-title itempropname>a hrefhttps://www.blog.baldengineering.com/2025/09/jsr-lam-research-and-sk-hynix-push.html>JSR, Lam Research, and SK hynix Push the Boundaries of ASML´s EUV Semiconductor Manufacturing/a>/h3>div classpost-header>div classpost-header-line-1>/div>/div>div classpost-body entry-content idpost-body-124907048765482335 itemproparticleBody>p styletext-align: justify;>JSR Corporation, including its subsidiary Inpria Corporation, and Lam Research have entered into a cross-licensing and collaboration agreement to accelerate the development of next-generation semiconductor manufacturing technologies. The partnership combines JSR’s expertise in photoresists and advanced materials—anchored by Inpria’s metal-oxide resists (MORs) for extreme ultraviolet (EUV) lithography—with Lam’s leadership in wafer fabrication equipment and process technology. By sharing intellectual property and integrating complementary capabilities, the companies aim to address scaling and patterning challenges as chipmakers pursue smaller, denser, and more energy-efficient devices for advanced logic and memory applications./p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEjkGbHOOhbcYSIgvCCXPcUaUV83q6sRBjmjQaAhIQpGUfVT2qZ_5SMUJWSXVY3VCrx-5VwFJwrhWiiECNsenx8AFkCCT6tdFJ3wideubjv4pqaGGp1Ao8jpScxy5zZ3HqwZ2X8oCEyGkrJfX2zOqHQEvafwWV9oX_7ZMr_PVX0COvdjUqf2aprZDKA3XJA/s350/JSR-LamResearch1.jpg imageanchor1 stylemargin-left: 1em; margin-right: 1em;>img border0 data-original-height127 data-original-width350 height116 loadinglazy srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEjkGbHOOhbcYSIgvCCXPcUaUV83q6sRBjmjQaAhIQpGUfVT2qZ_5SMUJWSXVY3VCrx-5VwFJwrhWiiECNsenx8AFkCCT6tdFJ3wideubjv4pqaGGp1Ao8jpScxy5zZ3HqwZ2X8oCEyGkrJfX2zOqHQEvafwWV9oX_7ZMr_PVX0COvdjUqf2aprZDKA3XJA/s320/JSR-LamResearch1.jpg width320 />/a>/div>p styletext-align: justify;>Inpria’s MORs, based on spin-on tin-oxide materials, provide high EUV photon absorption, excellent etch resistance, and reduced line edge roughness compared with conventional organic resists. These materials are fully compatible with existing lithography systems, making them attractive for high-volume production. To meet growing demand, JSR is expanding its global footprint with new R&D facilities in Japan and a production plant in Korea set to begin operations in 2026. Lam Research complements this with its Aether® dry resist technology, which replaces wet spin-coating and development with fully dry, vapor-phase processes. This innovation improves uniformity, reduces stochastic defects, and strengthens EUV absorption, enabling higher resolution and sensitivity. Aether has demonstrated direct-print 28 nm pitch patterning for logic and is already being adopted by leading memory manufacturers, offering both performance advantages and sustainability gains through reduced chemical and energy use./p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEhvQq4lUEENbEXAgWx6dDIPcrxfL6OKvAvgFnSkKcePDBm9_U4IQ4eM-GZBZ1jszSGbnLMtcCmSrx6TKs1py1l1YEsV-ehhyphenhyphenkRu1SrCGgha7BP1NKCfWCVplsVrnhlkJPGEXNRLEDG7M2Kh0BYqSPPxL7om8VHiAg5aiQUiKJPOXFGpauRO5q_k3P8e1C8/s740/skhynix.jpeg imageanchor1 stylemargin-left: 1em; margin-right: 1em;>img border0 data-original-height416 data-original-width740 height360 loadinglazy srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEhvQq4lUEENbEXAgWx6dDIPcrxfL6OKvAvgFnSkKcePDBm9_U4IQ4eM-GZBZ1jszSGbnLMtcCmSrx6TKs1py1l1YEsV-ehhyphenhyphenkRu1SrCGgha7BP1NKCfWCVplsVrnhlkJPGEXNRLEDG7M2Kh0BYqSPPxL7om8VHiAg5aiQUiKJPOXFGpauRO5q_k3P8e1C8/w640-h360/skhynix.jpeg width640 />/a>/div>br />p styletext-align: justify;>These advances align with a broader industry shift toward tighter integration of materials and equipment solutions, exemplified by SK hynix’s installation of the world’s first commercial High-NA EUV lithography tool, ASML’s TWINSCAN EXE:5200B, at its M16 fab in Icheon, South Korea. Featuring a numerical aperture of 0.55—compared with 0.33 in current Low-NA EUV systems—the High-NA platform boosts resolution by 40%, enabling transistors about 1.7× smaller and wafer transistor densities nearly 2.9× higher. For SK hynix, this milestone supports the development of next-generation DRAM, reduces process complexity, lowers costs, and strengthens competitiveness in AI memory and advanced compute markets./p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEg1tv9TuhgBRP9oN7XigPE1U4d-PCTtKMFfBRbLYKhqHBR98O2ElPHZGrIOZfxb673v0S1eS_ZBKAdLy9vgI0B4li3spdoSzydo27MhOuEV5cXqt4Tdwfp-ZSzfonmbVuh1INABRMpxzETcfEP508upgsm7U7UuKyvCjUSsnf9wjGVnCIpdFZ_vG7xTH9I/s1920/1-1080.9725f47e.png imageanchor1 stylemargin-left: 1em; margin-right: 1em;>img border0 data-original-height1079 data-original-width1920 height360 loadinglazy srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEg1tv9TuhgBRP9oN7XigPE1U4d-PCTtKMFfBRbLYKhqHBR98O2ElPHZGrIOZfxb673v0S1eS_ZBKAdLy9vgI0B4li3spdoSzydo27MhOuEV5cXqt4Tdwfp-ZSzfonmbVuh1INABRMpxzETcfEP508upgsm7U7UuKyvCjUSsnf9wjGVnCIpdFZ_vG7xTH9I/w640-h360/1-1080.9725f47e.png width640 />/a>/div>br />p styletext-align: justify;>As one of the “big three” memory makers alongside Samsung and Micron, SK hynix has established itself as the leader in high-volume DRAM manufacturing. It was the first to mass-produce DDR5 and high-bandwidth memory (HBM3), both essential for AI and high-performance computing. Its early adoption of EUV lithography for DRAM production—and now the industry-first deployment of ASML’s High-NA EUV system—underscores its position at the forefront of DRAM scaling and density. Together, the innovations from JSR, Inpria, Lam Research, and SK hynix illustrate how collaboration across the semiconductor ecosystem is driving the breakthroughs required to sustain Moore’s Law in the era of AI and advanced computing./p>hr styletext-align: justify; />p styletext-align: justify;>/p>p styletext-align: justify;>Do you want me to keep the strong>headline-style opening/strong> as above, or make it read more like a strong>press release introduction/strong> with a formal lead sentence?/p>p styletext-align: justify;>/p>p styletext-align: justify;>b>Sources:/b>/p>p styletext-align: justify;>a hrefhttps://acnnewswire.com/press-release/english/102572/>JSR Corporation/Inpria Corporation and Lam Research Enter Cross Licensing and Collaboration Agreement to Advance Semiconductor Manufacturing/a>/p>p styletext-align: justify;>a hrefhttps://euvlitho.com/2023/P42.pdf?utm_sourcechatgpt.com>Dry Resist Patterning Progress and Readiness Towards High NA EUV Lithography/a>/p>p styletext-align: justify;>a hrefhttps://www.inpria.com/?utm_sourcechatgpt.com>INPRIA | A world leader world leader in metal oxide photoresist design, development and manufacturing/a>/p>p styletext-align: justify;>a hrefhttps://www.jsr.co.jp/jsr_e/news/2022/20220802.html?utm_sourcechatgpt.com>Inpria Co-Developing Metal Oxide Resist with SK hynix to Reduce Complexity of Patterning for Next-Generation DRAM | 2022 | News | JSR Corporation/a>/p>p styletext-align: justify;>a hrefhttps://news.skhynix.com/sk-hynix-introduces-industrys-first-commercial-high-na-euv/?utm_sourcechatgpt.com>SK hynix Introduces Industry’s First Commercial High NA EUV/a>/p>div styleclear: both;>/div>/div>div classpost-footer>div classpost-footer-line post-footer-line-1>span classpost-author vcard>Posted byspan classfn itempropauthor itemscopeitemscope itemtypehttp://schema.org/Person>meta contenthttps://www.blogger.com/profile/09326073294896585855 itempropurl/>a classg-profile hrefhttps://www.blogger.com/profile/09326073294896585855 relauthor titleauthor profile>span itempropname>Jonas Sundqvist/span>/a>/span>/span>span classpost-timestamp>atmeta contenthttps://www.blog.baldengineering.com/2025/09/jsr-lam-research-and-sk-hynix-push.html itempropurl/>a classtimestamp-link hrefhttps://www.blog.baldengineering.com/2025/09/jsr-lam-research-and-sk-hynix-push.html relbookmark titlepermanent link>abbr classpublished itempropdatePublished title2025-09-16T07:06:00+02:00>7:06 AM/abbr>/a>/span>span classreaction-buttons>/span>span classpost-comment-link>a classcomment-link hrefhttps://www.blog.baldengineering.com/2025/09/jsr-lam-research-and-sk-hynix-push.html#comment-form onclick>1 comment:  /a>/span>span classpost-backlinks post-comment-link>/span>span classpost-icons>span classitem-control blog-admin pid-232533098>a hrefhttps://www.blogger.com/post-edit.g?blogID568392849289927853&postID124907048765482335&frompencil titleEdit Post>img alt classicon-action height18 srchttps://resources.blogblog.com/img/icon18_edit_allbkg.gif width18/>/a>/span>/span>div classpost-share-buttons goog-inline-block>a classgoog-inline-block share-button sb-email hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID124907048765482335&targetemail target_blank titleEmail This>span classshare-button-link-text>Email This/span>/a>a classgoog-inline-block share-button sb-blog hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID124907048765482335&targetblog onclickwindow.open(this.href, _blank, height270,width475); return false; target_blank titleBlogThis!>span classshare-button-link-text>BlogThis!/span>/a>a classgoog-inline-block share-button sb-twitter hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID124907048765482335&targettwitter target_blank titleShare to X>span classshare-button-link-text>Share to X/span>/a>a classgoog-inline-block share-button sb-facebook hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID124907048765482335&targetfacebook onclickwindow.open(this.href, _blank, height430,width640); return false; target_blank titleShare to Facebook>span classshare-button-link-text>Share to Facebook/span>/a>a classgoog-inline-block share-button sb-pinterest hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID124907048765482335&targetpinterest target_blank titleShare to Pinterest>span classshare-button-link-text>Share to Pinterest/span>/a>/div>/div>div classpost-footer-line post-footer-line-2>span classpost-labels>Labels:a hrefhttps://www.blog.baldengineering.com/search/label/ALD%20Equipment reltag>ALD Equipment/a>,a hrefhttps://www.blog.baldengineering.com/search/label/ASML reltag>ASML/a>,a hrefhttps://www.blog.baldengineering.com/search/label/DRAM reltag>DRAM/a>,a hrefhttps://www.blog.baldengineering.com/search/label/EUV reltag>EUV/a>,a hrefhttps://www.blog.baldengineering.com/search/label/Semiconductor reltag>Semiconductor/a>,a hrefhttps://www.blog.baldengineering.com/search/label/SK%20Hynix reltag>SK Hynix/a>/span>/div>div classpost-footer-line post-footer-line-3>span classpost-location>/span>/div>/div>/div>/div>div classpost-outer>div classpost hentry uncustomized-post-template itempropblogPost itemscopeitemscope itemtypehttp://schema.org/BlogPosting>meta contenthttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEi0_msxEhovKSYmntWvfNqWfLPs1H7nrsAzfbSEH0cmDdTwyNHZhvx6Sr5yCpf11cxJo-aTqGM5wgRzocF2wUDgtsLv-0LLE_VXKCwroF3mKtPf_R09uSrTfN2tRva6VRoaQVHNz2_dQegcEX3fErvXGy8HVcowM4u-kmnnDNXwY9VCh1j72yVIU2uRe34/w640-h360/Figure%202%208.29.25.png itempropimage_url/>meta content568392849289927853 itempropblogId/>meta content2556238845121581701 itemproppostId/>a name2556238845121581701>/a>h3 classpost-title entry-title itempropname>a hrefhttps://www.blog.baldengineering.com/2025/09/breaking-copper-bottleneck-lam.html>Breaking the Copper Bottleneck: Lam Research’s Mo-ALD ALTUS Halo Enables Next-Generation Hybrid Metallization/a>/h3>div classpost-header>div classpost-header-line-1>/div>/div>div classpost-body entry-content idpost-body-2556238845121581701 itemproparticleBody>p styletext-align: justify;>Lam Research now offers molybdenum (Mo) atomic layer deposition (ALD) with its span data-end93 data-start79>ALTUS Halo/span> platform, introduced in 2025 as the first high-volume ALD tool designed for Mo metallization. The system enables conformal and selective, bottom-up deposition of low-resistivity, void-free Mo films, targeting advanced logic, memory, and 3D NAND applications where conventional copper and tungsten interconnects face scaling and reliability limits. This positions Lam’s Mo-ALD as a key enabler for next-generation BEOL hybrid metallization schemes./p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEi0_msxEhovKSYmntWvfNqWfLPs1H7nrsAzfbSEH0cmDdTwyNHZhvx6Sr5yCpf11cxJo-aTqGM5wgRzocF2wUDgtsLv-0LLE_VXKCwroF3mKtPf_R09uSrTfN2tRva6VRoaQVHNz2_dQegcEX3fErvXGy8HVcowM4u-kmnnDNXwY9VCh1j72yVIU2uRe34/s1280/Figure%202%208.29.25.png imageanchor1 stylemargin-left: 1em; margin-right: 1em;>img border0 data-original-height720 data-original-width1280 height360 loadinglazy srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEi0_msxEhovKSYmntWvfNqWfLPs1H7nrsAzfbSEH0cmDdTwyNHZhvx6Sr5yCpf11cxJo-aTqGM5wgRzocF2wUDgtsLv-0LLE_VXKCwroF3mKtPf_R09uSrTfN2tRva6VRoaQVHNz2_dQegcEX3fErvXGy8HVcowM4u-kmnnDNXwY9VCh1j72yVIU2uRe34/w640-h360/Figure%202%208.29.25.png width640 />/a>/div>p styletext-align: justify;>i>Current density of various metal/via schemes. Red and green areas indicate higher current density.  /i>/p>p styletext-align: justify;>Hybrid metallization using Mo shows strong potential to overcome the scaling limitations of conventional copper dual damascene (Cu DD) processes in advanced semiconductor BEOL interconnects. As device dimensions shrink, Cu faces challenges such as increased resistivity, barrier thickness limitations, and stress-induced voids (SIVs), all of which degrade performance. Mo hybrid metallization, which uses bottom-up barrierless metal deposition before a conventional Cu process, significantly reduces resistance—by about 55% compared to Cu DD—and further by 15% with selective barrier deposition (SBD). This lower resistance translates into higher current densities and improved reliability. Stress distribution studies also reveal that Mo hybrid vias exhibit lower void formation risks than Cu due to smaller stress gradients at the via/barrier interfaces./p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEjpXowgylEmmVjUgrZ7aIIrnDtABE_EHRbe_2kXituLxYVRLeJhyphenhyphenwWLAPD06ANefqFA4C-jE1A89yNgSK4iExwp1pp22D6Swjt3h0OByfmo0ItHNUuP33lYKqr17ReXPzYVY-1s_C7U05Tfeut91T6PQN-C3MB5fXlHXXgNK4vzCxf9ZA0GJMmVBh81wxY/s1280/Figure%201%208.29.25.png imageanchor1 stylemargin-left: 1em; margin-right: 1em;>img border0 data-original-height720 data-original-width1280 height360 loadinglazy srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEjpXowgylEmmVjUgrZ7aIIrnDtABE_EHRbe_2kXituLxYVRLeJhyphenhyphenwWLAPD06ANefqFA4C-jE1A89yNgSK4iExwp1pp22D6Swjt3h0OByfmo0ItHNUuP33lYKqr17ReXPzYVY-1s_C7U05Tfeut91T6PQN-C3MB5fXlHXXgNK4vzCxf9ZA0GJMmVBh81wxY/w640-h360/Figure%201%208.29.25.png width640 />/a>/div>p styletext-align: justify;>i>Comparison of via and line resistance for conventional Cu dual damascene and Mo hybrid metallization schemes. Mo vias reduce total resistance by ~35% without selective barrier deposition (SBD), with an additional ~20% reduction when fully replacing Cu. Applying SBD further lowers resistance, achieving up to ~55% reduction compared to the Cu baseline./i>/p>p>/p>p styletext-align: justify;>Optimization studies, performed with SEMulator3D® simulations, identified key parameters like via critical dimensions, height, and material stress properties that impact resistance, capacitance, and hydrostatic stress. Findings show that increasing Mo via height lowers resistance but raises stress, suggesting an optimal fill height around 25 nm for balancing performance and reliability. Intrinsic stress of Mo and process temperature tuning were also shown to mitigate stress-induced reliability issues, with 400°C identified as a favorable condition. Ultimately, hybrid metallization with Mo offers a scalable path forward, combining electrical and mechanical benefits, while virtual DOE and process modeling enable predictive optimization without extensive wafer-based experiments./p>p>b>Sources:/b>/p>p>a hrefhttps://newsroom.lamresearch.com/breaking-the-copper-bottleneck-with-molybdenum-hybrid-metallization>Breaking the Copper Bottleneck With Molybdenum Hybrid Metallization/a>/p>p>a hrefhttps://newsroom.lamresearch.com/2025-02-19-Lam-Research-Ushers-in-New-Era-of-Semiconductor-Metallization-with-ALTUS-R-Halo-for-Molybdenum-Atomic-Layer-Deposition?utm_sourcechatgpt.com>Lam Research Ushers in New Era of Semiconductor Metallization with ALTUS® Halo for Molybdenum Atomic Layer Deposition - Feb 19, 2025/a>/p>div styleclear: both;>/div>/div>div classpost-footer>div classpost-footer-line post-footer-line-1>span classpost-author vcard>Posted byspan classfn itempropauthor itemscopeitemscope itemtypehttp://schema.org/Person>meta contenthttps://www.blogger.com/profile/09326073294896585855 itempropurl/>a classg-profile hrefhttps://www.blogger.com/profile/09326073294896585855 relauthor titleauthor profile>span itempropname>Jonas Sundqvist/span>/a>/span>/span>span classpost-timestamp>atmeta contenthttps://www.blog.baldengineering.com/2025/09/breaking-copper-bottleneck-lam.html itempropurl/>a classtimestamp-link hrefhttps://www.blog.baldengineering.com/2025/09/breaking-copper-bottleneck-lam.html relbookmark titlepermanent link>abbr classpublished itempropdatePublished title2025-09-16T06:22:00+02:00>6:22 AM/abbr>/a>/span>span classreaction-buttons>/span>span classpost-comment-link>a classcomment-link hrefhttps://www.blog.baldengineering.com/2025/09/breaking-copper-bottleneck-lam.html#comment-form onclick>No comments:  /a>/span>span classpost-backlinks post-comment-link>/span>span classpost-icons>span classitem-control blog-admin pid-232533098>a hrefhttps://www.blogger.com/post-edit.g?blogID568392849289927853&postID2556238845121581701&frompencil titleEdit Post>img alt classicon-action height18 srchttps://resources.blogblog.com/img/icon18_edit_allbkg.gif width18/>/a>/span>/span>div classpost-share-buttons goog-inline-block>a classgoog-inline-block share-button sb-email hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID2556238845121581701&targetemail target_blank titleEmail This>span classshare-button-link-text>Email This/span>/a>a classgoog-inline-block share-button sb-blog hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID2556238845121581701&targetblog onclickwindow.open(this.href, _blank, height270,width475); return false; target_blank titleBlogThis!>span classshare-button-link-text>BlogThis!/span>/a>a classgoog-inline-block share-button sb-twitter hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID2556238845121581701&targettwitter target_blank titleShare to X>span classshare-button-link-text>Share to X/span>/a>a classgoog-inline-block share-button sb-facebook hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID2556238845121581701&targetfacebook onclickwindow.open(this.href, _blank, height430,width640); return false; target_blank titleShare to Facebook>span classshare-button-link-text>Share to Facebook/span>/a>a classgoog-inline-block share-button sb-pinterest hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID2556238845121581701&targetpinterest target_blank titleShare to Pinterest>span classshare-button-link-text>Share to Pinterest/span>/a>/div>/div>div classpost-footer-line post-footer-line-2>span classpost-labels>Labels:a hrefhttps://www.blog.baldengineering.com/search/label/ALD%20-%20Atomic%20Layer%20Deposition reltag>ALD - Atomic Layer Deposition/a>,a hrefhttps://www.blog.baldengineering.com/search/label/ALD%20Equipment reltag>ALD Equipment/a>,a hrefhttps://www.blog.baldengineering.com/search/label/molybdenum reltag>molybdenum/a>/span>/div>div classpost-footer-line post-footer-line-3>span classpost-location>/span>/div>/div>/div>/div>          /div>/div>                  div classdate-outer>        h2 classdate-header>span>Monday, September 15, 2025/span>/h2>          div classdate-posts>        div classpost-outer>div classpost hentry uncustomized-post-template itempropblogPost itemscopeitemscope itemtypehttp://schema.org/BlogPosting>meta contenthttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEgHPZYi_uvg6n44bVaS0wIGTAWP10OsXbfxiejDz6QFMDXGCc_XVpcqlgrxgwtY8gnxNOC7VfwGE_i80JTYIE0rSsR2svVcIGMkmVRieCKZaCw2qigZBUzoNu_ULbKLhyphenhyphenVrAAVvLjHfrNv7fBQW2goFnLSdYAtXPeSfCb4odWziuNnwEgTvcXF5H_tOCsk/s320/Atmospheric%20Degradation_Border_1600x900_WEB.jpg itempropimage_url/>meta content568392849289927853 itempropblogId/>meta content8774482759655732102 itemproppostId/>a name8774482759655732102>/a>h3 classpost-title entry-title itempropname>a hrefhttps://www.blog.baldengineering.com/2025/09/ald-news-week-38.html>ALD News Week 38/a>/h3>div classpost-header>div classpost-header-line-1>/div>/div>div classpost-body entry-content idpost-body-8774482759655732102 itemproparticleBody>p>b>Solid-state batteries get a boost with new protective coating/b>/p>p>Link: a hrefhttps://www.anl.gov/article/solidstate-batteries-get-a-boost-with-new-protective-coating>https://www.anl.gov/article/solidstate-batteries-get-a-boost-with-new-protective-coating/a>br />br />“A thin, glass-like layer could help protect solid-state batteries from degradation, researchers say. They use a process called atomic layer deposition (ALD) to apply a protective layer.” (a hrefhttps://www.anl.gov/article/solidstate-batteries-get-a-boost-with-new-protective-coating?utm_sourcechatgpt.com titleSolid-state batteries get a boost with new protective coating>ANL/a>)/p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEgHPZYi_uvg6n44bVaS0wIGTAWP10OsXbfxiejDz6QFMDXGCc_XVpcqlgrxgwtY8gnxNOC7VfwGE_i80JTYIE0rSsR2svVcIGMkmVRieCKZaCw2qigZBUzoNu_ULbKLhyphenhyphenVrAAVvLjHfrNv7fBQW2goFnLSdYAtXPeSfCb4odWziuNnwEgTvcXF5H_tOCsk/s534/Atmospheric%20Degradation_Border_1600x900_WEB.jpg imageanchor1 stylemargin-left: 1em; margin-right: 1em;>img border0 data-original-height300 data-original-width534 height180 loadinglazy srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEgHPZYi_uvg6n44bVaS0wIGTAWP10OsXbfxiejDz6QFMDXGCc_XVpcqlgrxgwtY8gnxNOC7VfwGE_i80JTYIE0rSsR2svVcIGMkmVRieCKZaCw2qigZBUzoNu_ULbKLhyphenhyphenVrAAVvLjHfrNv7fBQW2goFnLSdYAtXPeSfCb4odWziuNnwEgTvcXF5H_tOCsk/s320/Atmospheric%20Degradation_Border_1600x900_WEB.jpg width320 />/a>/div>br />p>/p>p>b>Microwave enhanced atomic layer deposition (MW-ALD): Incorporating a microwave antenna into an ALD reactor/b>br />Link: a hrefhttps://pubs.aip.org/avs/jva/article/43/5/052403/3361679/Microwave-enhanced-atomic-layer-deposition-MW-ALD>https://pubs.aip.org/avs/jva/article/43/5/052403/3361679/Microwave-enhanced-atomic-layer-deposition-MW-ALD/a>br />br />“Atomic layer deposition (ALD) is a technique widely used for thin film deposition with excellent uniformity and conformality. In this work, we present a modification of a conventional ALD system by integrating a microwave antenna to explore how microwave energy can enhance film growth and reduce cycle times, particularly for materials that are otherwise difficult to deposit.” (a hrefhttps://pubs.aip.org/avs/jva/article/43/5/052403/3361679/Microwave-enhanced-atomic-layer-deposition-MW-ALD?utm_sourcechatgpt.com titleMicrowave enhanced atomic layer deposition (MW-ALD ...>AIP Publishing/a>)/p>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEh_DzETPVgmaWVocqhxw8y1JEs8MEGZlxB4J2zdYRkyuqQKkTwxpRVIiQ9La6L8Ar7JGNPM13nztGEnyDrhleuUZTdkjB2VwaTKxzRVWyF5aMOBY38x5_AVHuOsrd2t03skXev19zv2C5cB0uNnymRGp3SLz2zy2VKCw94k_nhI6WfucJVT3sRo6WBQe5s/s822/Screenshot%202025-09-15%20074220.png imageanchor1 stylemargin-left: 1em; margin-right: 1em;>img border0 data-original-height382 data-original-width822 height149 loadinglazy srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEh_DzETPVgmaWVocqhxw8y1JEs8MEGZlxB4J2zdYRkyuqQKkTwxpRVIiQ9La6L8Ar7JGNPM13nztGEnyDrhleuUZTdkjB2VwaTKxzRVWyF5aMOBY38x5_AVHuOsrd2t03skXev19zv2C5cB0uNnymRGp3SLz2zy2VKCw94k_nhI6WfucJVT3sRo6WBQe5s/s320/Screenshot%202025-09-15%20074220.png width320 />/a>/div>br />p>/p>p>b>Impacts of different thickness Al2O3 and SiO2 atomic layer deposition sidewall passivation layers on GaN-based devices/b>br />Link: a hrefhttps://pubs.aip.org/avs/jvb/article/43/5/052209/3361926/Impacts-of-different-thickness-Al2O3-and-SiO2-atomic-layer-deposition-sidewall>https://pubs.aip.org/avs/jvb/article/43/5/052209/3361926/Impacts-of-different-thickness-Al2O3-and-SiO2-atomic-layer-deposition-sidewall/a>br /> br />“The sidewall passivation layer has a critical effect on the performance and reliability of GaN-based devices. In this study, we investigate how varying the thickness of atomic layer deposition (ALD) Al₂O₃ and SiO₂ sidewall passivation layers influences device leakage, breakdown voltage, and surface recombination. The results show that thicker layers can better suppress leakage but may lead to trade-offs in other device parameters.” (a hrefhttps://pubs.aip.org/avs/jvb/article/43/5/052209/3361926/Impacts-of-different-thickness-Al2O3-and-SiO2?utm_sourcechatgpt.com titleImpacts of different thickness Al2O3 and SiO2 atomic layer ...>AIP Publishing/a>)/p>hr />p>b>Forge Nano to Unveil Commercial Single Module Semiconductor Wafer Fab ALD Tool at SEMICON Taiwan/b>br />Link: a hrefhttps://www.globenewswire.com/news-release/2025/09/04/3144564/0/en/Forge-Nano-to-Unveil-Commercial-Single-Module-Semiconductor-Wafer-Fab-ALD-Tool-at-SEMICON-Taiwan.html>https://www.globenewswire.com/news-release/2025/09/04/3144564/0/en/Forge-Nano-to-Unveil-Commercial-Single-Module-Semiconductor-Wafer-Fab-ALD-Tool-at-SEMICON-Taiwan.html/a>br />br />DENVER, Sept. 04, 2025 (GLOBE NEWSWIRE) -- Forge Nano, Inc., a technology company pioneering domestic battery and semiconductor innovations, today announced it is unveiling a new commercial single module semiconductor wafer fab atomic layer deposition (ALD) tool – TEPHRA^{One}. The fully automated 200 mm single module platform is outfitted with features from Forge Nano’s flagship multi-process module TEPHRA in a streamlined configuration for oxide, nitride, metal and nanolaminate coatings. (a hrefhttps://www.globenewswire.com/news-release/2025/09/04/3144564/0/en/Forge-Nano-to-Unveil-Commercial-Single-Module-Semiconductor-Wafer-Fab-ALD-Tool-at-SEMICON-Taiwan.html?utm_sourcechatgpt.com titleForge Nano to Unveil Commercial Single Module ...>GlobeNewswire/a>)/p>hr />p>b>New Tool Announcement: Thermal/Plasma ALD System Now Available for User Access/b>br />Link: a hrefhttps://nanofab.ucsd.edu/new-tool-announcement_thermal-plasma-ald-system/>https://nanofab.ucsd.edu/new-tool-announcement_thermal-plasma-ald-system//a>br />br />We are happy to announce that the new Arradiance GEMStar Thermal & Plasma ALD (Atomic Layer Deposition) System is now available for user access. This advanced system supports both thermal and plasma enhanced ALD processes and is designed to allow users to explore a wide range of thin film materials and process conditions. (a hrefhttps://nanofab.ucsd.edu/new-tool-announcement_thermal-plasma-ald-system/?utm_sourcechatgpt.com titleNew Tool Announcement_Thermal/Plasma ALD System>nanofab.ucsd.edu/a>)/p>hr />p>/p>p>b>Press Release “ALD for Industry 2025” - Dresden/b>br />Link: a hrefhttps://efds.org/en/45604/>https://efds.org/en/45604//a>br />br />Dresden, March 12, 2025 – The 8th International Conference “ALD FOR INDUSTRY” has once again bridged the gap between basic research, industrialization and commercialization of atomic layer deposition (ALD). This event, which has been held annually in Dresden since 2017, once again welcomed over 100 participants from 14 countries and numerous exhibitors this year despite the strike at German airports. (a hrefhttps://efds.org/en/45604/?utm_sourcechatgpt.com titlePress Release “ALD for Industry 2025” - Dresden>efds.org/a>)/p>hr />p>b>News & Announcements: Continuous, high-speed atomic layer deposition for thin-film coatings/b>br />Link: a hrefhttps://www.anl.gov/amd/news-announcements>https://www.anl.gov/amd/news-announcements/a>br />br />“Self-exhausting” precursor pulses enable fast, precise coating applications for … (a hrefhttps://www.anl.gov/amd/news-announcements?utm_sourcechatgpt.com titleNews & Announcements>ANL/a>)/p>hr />p>/p>p>br />/p>div styleclear: both;>/div>/div>div classpost-footer>div classpost-footer-line post-footer-line-1>span classpost-author vcard>Posted byspan classfn itempropauthor itemscopeitemscope itemtypehttp://schema.org/Person>meta contenthttps://www.blogger.com/profile/09326073294896585855 itempropurl/>a classg-profile hrefhttps://www.blogger.com/profile/09326073294896585855 relauthor titleauthor profile>span itempropname>Jonas Sundqvist/span>/a>/span>/span>span classpost-timestamp>atmeta contenthttps://www.blog.baldengineering.com/2025/09/ald-news-week-38.html itempropurl/>a classtimestamp-link hrefhttps://www.blog.baldengineering.com/2025/09/ald-news-week-38.html relbookmark titlepermanent link>abbr classpublished itempropdatePublished title2025-09-15T07:43:00+02:00>7:43 AM/abbr>/a>/span>span classreaction-buttons>/span>span classpost-comment-link>a classcomment-link hrefhttps://www.blog.baldengineering.com/2025/09/ald-news-week-38.html#comment-form onclick>No comments:  /a>/span>span classpost-backlinks post-comment-link>/span>span classpost-icons>span classitem-control blog-admin pid-232533098>a hrefhttps://www.blogger.com/post-edit.g?blogID568392849289927853&postID8774482759655732102&frompencil titleEdit Post>img alt classicon-action height18 srchttps://resources.blogblog.com/img/icon18_edit_allbkg.gif width18/>/a>/span>/span>div classpost-share-buttons goog-inline-block>a classgoog-inline-block share-button sb-email hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID8774482759655732102&targetemail target_blank titleEmail This>span classshare-button-link-text>Email This/span>/a>a classgoog-inline-block share-button sb-blog hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID8774482759655732102&targetblog onclickwindow.open(this.href, _blank, height270,width475); return false; target_blank titleBlogThis!>span classshare-button-link-text>BlogThis!/span>/a>a classgoog-inline-block share-button sb-twitter hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID8774482759655732102&targettwitter target_blank titleShare to X>span classshare-button-link-text>Share to X/span>/a>a classgoog-inline-block share-button sb-facebook hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID8774482759655732102&targetfacebook onclickwindow.open(this.href, _blank, height430,width640); return false; target_blank titleShare to Facebook>span classshare-button-link-text>Share to Facebook/span>/a>a classgoog-inline-block share-button sb-pinterest hrefhttps://www.blogger.com/share-post.g?blogID568392849289927853&postID8774482759655732102&targetpinterest target_blank titleShare to Pinterest>span classshare-button-link-text>Share to Pinterest/span>/a>/div>/div>div classpost-footer-line post-footer-line-2>span classpost-labels>Labels:a hrefhttps://www.blog.baldengineering.com/search/label/ALD%20-%20Atomic%20Layer%20Deposition reltag>ALD - Atomic Layer Deposition/a>/span>/div>div classpost-footer-line post-footer-line-3>span classpost-location>/span>/div>/div>/div>/div>          /div>/div>                  div classdate-outer>        h2 classdate-header>span>Sunday, September 14, 2025/span>/h2>          div classdate-posts>        div classpost-outer>div classpost hentry uncustomized-post-template itempropblogPost itemscopeitemscope itemtypehttp://schema.org/BlogPosting>meta contenthttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEjRy-2eQ7REodIYwWZOkaSfAvSvPwW9NeDj0GESAjgFhr6GDR6QbmKUsYm3vZ55qGHuPTB2Puoyv0xKcz4q2dapjMmpAaxkEDQOGr23hK85CxBd2T4k335Cz1NUQOumaUCBMq3kOLECBKuXhBl0KcqyuRPwx-XhlFpvz8lJHFocXb72-HK-L5QkMBnHvrc/w368-h640/Picture1.png itempropimage_url/>meta content568392849289927853 itempropblogId/>meta content2448431979998399035 itemproppostId/>a name2448431979998399035>/a>h3 classpost-title entry-title itempropname>a hrefhttps://www.blog.baldengineering.com/2025/09/global-semiconductor-sales-surge-206-in.html>Global Semiconductor Sales Surge 20.6% in July, Driven by Americas and Asia Pacific/a>/h3>div classpost-header>div classpost-header-line-1>/div>/div>div classpost-body entry-content idpost-body-2448431979998399035 itemproparticleBody>p styletext-align: justify;>Global semiconductor sales surged in July 2025, reaching $62.1 billion — a 20.6% increase from the same month last year and 3.6% higher than June. The robust expansion was fueled by strong demand in the Americas and Asia Pacific, underscoring the industry’s momentum despite regional fluctuations. With the Americas up nearly 30% and Asia Pacific/All Other climbing over 35% year-on-year, July marked one of the strongest months of growth in recent years, highlighting continued strength in advanced computing, AI, and data-driven technologies./p>ul>li>The Americas and Asia Pacific regions are the strongest contributors to both monthly and yearly growth./li>li>China is still growing year-to-year but slipped month-to-month, suggesting softer short-term demand./li>li>Japan is contracting in both comparisons, signaling structural weakness./li>li>Europe remains modest but positive year-to-year./li>/ul>div classseparator styleclear: both; text-align: center;>a hrefhttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEjRy-2eQ7REodIYwWZOkaSfAvSvPwW9NeDj0GESAjgFhr6GDR6QbmKUsYm3vZ55qGHuPTB2Puoyv0xKcz4q2dapjMmpAaxkEDQOGr23hK85CxBd2T4k335Cz1NUQOumaUCBMq3kOLECBKuXhBl0KcqyuRPwx-XhlFpvz8lJHFocXb72-HK-L5QkMBnHvrc/s2228/Picture1.png imageanchor1 stylemargin-left: 1em; margin-right: 1em;>img border0 data-original-height2228 data-original-width1283 height640 loadinglazy srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEjRy-2eQ7REodIYwWZOkaSfAvSvPwW9NeDj0GESAjgFhr6GDR6QbmKUsYm3vZ55qGHuPTB2Puoyv0xKcz4q2dapjMmpAaxkEDQOGr23hK85CxBd2T4k335Cz1NUQOumaUCBMq3kOLECBKuXhBl0KcqyuRPwx-XhlFpvz8lJHFocXb72-HK-L5QkMBnHvrc/w368-h640/Picture1.png width368 />/a>/div>br />p styletext-align: justify;>br />/p>p>b>Global Overview/b>/p>p>/p>ul styletext-align: left;>li>Total sales: $62.07B/li>li>Year-to-year growth: +20.6% (vs. $51.48B in July 2024)/li>li>Month-to-month growth: +3.6% (vs. $59.91B in June 2025)/li>li>Three-month-moving average growth: +8.9%/li>/ul>p>/p>p>b>Regional Breakdown (Year-to-Year, July 2025 vs. July 2024)/b>/p>p>/p>ul styletext-align: left;>li>Asia Pacific/All Other: +35.6% (biggest growth driver)/li>li>Americas: +29.3%/li>li>China: +10.4%/li>li>Europe: +5.7%/li>li>Japan: -6.3% (only region in decline)/li>/ul>p>/p>p>b>Month-to-Month (July vs. June 2025)/b>/p>p>/p>ul styletext-align: left;>li>Americas: +8.6%/li>li>Asia Pacific/All Other: +4.9%/li>li>Europe: 0.0%/li>li>Japan: -0.2%/li>li>China: -1.3%/li>/ul>p>/p>p>/p>div>b>Source/b>:/div>div>a hrefhttps://www.semiconductors.org/global-semiconductor-sales-increase-20-6-year-to-year-in-july/>Global Semiconductor Sales Increase 20.6% Year-to-Year in July - Semiconductor Industry Association/a>/div>p>/p>div styleclear: both;>/div>/div>div classpost-footer>div classpost-footer-line post-footer-line-1>span classpost-author vcard>Posted byspan classfn itempropauthor itemscopeitemscope itemtypehttp://schema.org/Person>meta contenthttps://www.blogger.com/profile/09326073294896585855 itempropurl/>a classg-profile hrefhttps://www.blogger.com/profile/09326073294896585855 relauthor titleauthor profile>span itempropname>Jonas Sundqvist/span>/a>/span>/span>span classpost-timestamp>atmeta contenthttps://www.blog.baldengineering.com/2025/09/global-semiconductor-sales-surge-206-in.html 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porting: One of the interesting disclosures .../div>/div>div styleclear: both;>/div>/li>li>div classitem-content>div classitem-thumbnail>a hrefhttps://www.blog.baldengineering.com/2018/01/battery-breakthrough-company-feature.html target_blank>img alt border0 srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEgH8uWdOWvNHVUeVRriBFT_Bb-Vp76VPlTw9fNf-eJyRW3ZbrMPaHyGyhbs6rkG3Le2NBiMH3kIWH917rkC8SvwlJdIT6OL3sjKAOZ_03rZVO59EABXlsvStmRElqsFY854yOq1g0iLtmo/w72-h72-p-k-no-nu/ald+nano+2.png/>/a>/div>div classitem-title>a hrefhttps://www.blog.baldengineering.com/2018/01/battery-breakthrough-company-feature.html>Battery Breakthrough Company Feature - ALD NanoSolutions/a>/div>div classitem-snippet> There is an ongoing boom in the materials supply chain industry to supply the Electrical Vehicle (EV) manufacturers with battery materials..../div>/div>div styleclear: both;>/div>/li>li>div classitem-content>div classitem-thumbnail>a hrefhttps://www.blog.baldengineering.com/2019/12/advanced-energy-announces-grand-opening.html target_blank>img alt border0 srchttps://lh3.googleusercontent.com/blogger_img_proxy/AEn0k_vB13NzqiEr0Ux1awt8apA9-n1F5kL-uf9Gajk3aRruj6KKRy77iY4GxoGJjA6WqENqWwARcwZLuPByQNVDex_Yg4TKgwMpDVxzNme78vbO_LiHJ0su2Dd-PHq5PMal1w12kcShSDujkbTwcqtarj4BXmGl8bHjDnU1Ztq5PeFUGfcw7Oz8688LKwTBAGJ6y223FqgJiIbcpLaDjBb-qLpZnQw72-h72-p-k-no-nu/>/a>/div>div classitem-title>a hrefhttps://www.blog.baldengineering.com/2019/12/advanced-energy-announces-grand-opening.html>Advanced Energy Announces Grand Opening of State-of-the-Art Advanced Materials Processing Showcase Lab Near Frankfurt/a>/div>div classitem-snippet> FORT COLLINS, Colo.--(BUSINESS WIRE)--Dec. 10, 2019-- Advanced Energy Industries, Inc.  (Nasdaq: AEIS) – a global leader in highly engineer.../div>/div>div styleclear: both;>/div>/li>li>div classitem-content>div classitem-thumbnail>a hrefhttps://www.blog.baldengineering.com/2020/01/picosuns-ald-technology-enables-3d.html target_blank>img alt border0 srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEjCogZnBxVMlwOKsRMlukWc3bmkl2imzOhZmUnX_JlcWphpZ3_J8dJ56JRVPpDrKnKFlDX2K8F8WcNxwyxr9oGr-xdef5LSYST-7JZVCLzKCFCnUEJaAXWuIRtARQCTu84A5Lb6IBa_mWU/w72-h72-p-k-no-nu/Kuva-1-hires-768x191.png/>/a>/div>div classitem-title>a hrefhttps://www.blog.baldengineering.com/2020/01/picosuns-ald-technology-enables-3d.html>Picosun’s ALD technology enables 3D silicon-integrated microcapacitors with unprecedented performance/a>/div>div classitem-snippet> ESPOO, Finland, 2nd January 2020 (LINK) – Picosun Group, global provider of leading AGILE ALD® (Atomic Layer Deposition) thin film coating .../div>/div>div styleclear: both;>/div>/li>li>div classitem-content>div classitem-thumbnail>a hrefhttps://www.blog.baldengineering.com/2019/11/45-years-since-first-patent-on-atomic.html target_blank>img alt border0 srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEgHM6eQhrk_PKl-7V0u3eDv3gbuOdO1IvDMXMUnHn2-rBQJ9_ydNMty1HbkQL-ItuFnIyAUXoUvf1kaCj4Fu_1EGOV4BmbKB3vwpqeDcalcLks2QqGD_hRJc2Zp_MrFw7qfnzO0MOYrFBI/w72-h72-p-k-no-nu/ALD-Database-new.gif/>/a>/div>div classitem-title>a hrefhttps://www.blog.baldengineering.com/2019/11/45-years-since-first-patent-on-atomic.html>45 years since the first patent on Atomic Layer Deposition by Tuomo Suntola and Jorma Antson from Finland/a>/div>div classitem-snippet> Tomorrow it is 45 years since the first patent on Atomic Layer Deposition by Tuomo Suntola and Jorma Antson from Finland. While on LinkedIn.../div>/div>div styleclear: both;>/div>/li>li>div classitem-content>div classitem-thumbnail>a hrefhttps://www.blog.baldengineering.com/2020/10/imec-demonstrates-cnt-pellicle.html target_blank>img alt border0 srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEjmOxg-sWLhZNUF0aGrPIZGA7qZ9-pReyuob95oQrp5U2dM86FyPu1Hwr_k_f0QNuqfDYHZZ8u3YgHxPlSzoVzCiR8NXgUcEGNNJ-dF4_y-RnnbN63K-oEqRiDX1ElWSDWvH5NFPDiYm40/w72-h72-p-k-no-nu/photo+pellicle.jpg/>/a>/div>div classitem-title>a hrefhttps://www.blog.baldengineering.com/2020/10/imec-demonstrates-cnt-pellicle.html>Imec demonstrates CNT pellicle utilization on EUV scanner/a>/div>div classitem-snippet>LEUVEN (Belgium, LINK ) October 6, 2020 — Imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, ann.../div>/div>div styleclear: both;>/div>/li>li>div classitem-content>div classitem-thumbnail>a hrefhttps://www.blog.baldengineering.com/2020/02/picosun-delivers-multiple-production.html target_blank>img alt border0 srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEiWElLdzx7HXvxXAs0Pns2j0rKD2X50Hfc1nzyXiO9K5fV8dnKidizs874vgakr89ppeLenwj5YZ9AfjnQcwLQVTv-pmNVU7qqk29yA-h9uPhNPTvNpYScIt9hILjMPynFGwOyTEXuo9yY/w72-h72-p-k-no-nu/IMG_0191_jpg_hires_800pxforweb.jpg/>/a>/div>div classitem-title>a hrefhttps://www.blog.baldengineering.com/2020/02/picosun-delivers-multiple-production.html>Picosun delivers multiple production ALD systems to Asia for solid state lighting device manufacturing/a>/div>div classitem-snippet> ESPOO, Finland, 26th February 2020 ( LINK ) – Picosun Group, Finland-based, global provider of advanced Atomic Layer Deposition (ALD) thin .../div>/div>div styleclear: both;>/div>/li>li>div classitem-content>div classitem-thumbnail>a hrefhttps://www.blog.baldengineering.com/2018/01/hafnium-product-breakthrough.html target_blank>img alt border0 srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEhjucSTN43nQEcbCpT7OnqlQmETi4PDrT7dTRp9TtFQYE-70uz_CUNy3-NHLIIRQlrqQnbTOsajOg8LkgsYFMzMuMSIWxOJQMp5tcTjz2oggwUN68OceytDkQ_7-oVmbCfTZPr1REGru7k/w72-h72-p-k-no-nu/Alkane+1.png/>/a>/div>div classitem-title>a hrefhttps://www.blog.baldengineering.com/2018/01/hafnium-product-breakthrough.html>Hafnium product breakthrough consolidates Dubbo Project business case/a>/div>div classitem-snippet>Alkane - Hafnium product breakthrough consolidates Dubbo Project business case.  Summary  Alkane’s wholly owned subsidiary, Australian Strat.../div>/div>div styleclear: both;>/div>/li>li>div classitem-content>div classitem-thumbnail>a hrefhttps://www.blog.baldengineering.com/2023/10/the-semiconductor-showdown-tsmcs-gaa.html target_blank>img alt border0 srchttps://lh3.googleusercontent.com/blogger_img_proxy/AEn0k_scOdaY5jt8orFpHvf2Tobmnsj35qVHUx8mbaBKklqqn7-_e69JiBPrbaMNXzye-gPdkIVOjaLb72XCCN39nOaWcNKyT1qxavGUz9pVU59dMzUhmQw72-h72-n-k-no-nu/>/a>/div>div classitem-title>a hrefhttps://www.blog.baldengineering.com/2023/10/the-semiconductor-showdown-tsmcs-gaa.html>The Semiconductor Showdown: TSMCs GAA FETs vs. Intels RibbonFET/a>/div>div classitem-snippet>The semiconductor industry is witnessing a fierce competition between TSMC and Intel, as they advance transistor designs with TSMC's Gat.../div>/div>div styleclear: both;>/div>/li>li>div classitem-content>div classitem-thumbnail>a hrefhttps://www.blog.baldengineering.com/2019/01/strem-chemicals-offers-new-la-fmd-ald.html target_blank>img alt border0 srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEh60PJP3n0xqs4qS22soI0p_1sEiEEIT585n8yQuiBKL94bvx64QD0lWnUiNDAz5VFokRBYqy_h9tavRy5zN5N2I6Als_uj0zeef83EQ1iQzPiueMU5YJLMdzHI8CAC9ai0fh-kZpUWKFs/w72-h72-p-k-no-nu/Keyword+La.png/>/a>/div>div classitem-title>a hrefhttps://www.blog.baldengineering.com/2019/01/strem-chemicals-offers-new-la-fmd-ald.html>Strem Chemicals’ offers new La-FMD ALD precursor for future leading edge logic and memory products/a>/div>div classitem-snippet> Strem Chemicals’ offering of La-FMD is one of the most promising metal-amidinate ALD precursors for lanthanum (La) based ALD thin-films whi.../div>/div>div styleclear: both;>/div>/li>/ul>div classclear>/div>/div>/div>div classwidget Image data-version1 idImage12>h2>Blog Sponsoring/h2>div classwidget-content>a hrefhttp://baldengineering.blogspot.se/p/ald-blog-backgound-statistics.html>img altBlog Sponsoring height109 idImage12_img srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEhdLEbQ1WjcOBmtfnmWPdKiBQVEgG4_pWoxPqFJqGY-JHA5U_OZzLOY51yUgMCmkX-Sb2l0HN2FVdQ3RDvOg5u_lxSYd1M0gK2Vom8AbKlpZeLp778UbSz4jycDDwzAxDgqsgE92C9-uKo/s1600/sponsoring.png width390/>/a>br/>/div>div classclear>/div>/div>div classwidget Image data-version1 idImage6>h2>The ALD Precursor Engineer/h2>div classwidget-content>img altThe ALD Precursor Engineer height655 idImage6_img srchttps://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEiWGISCxTqJfyqW-AmcZmQYkoP4uPJVrqjW8-y_AqIuC-mdBXWfSlr-nPSjlodLr-vqYy3dOLxad6YRMkpeWih1bVlIQf0P1pfGtmBDOCsyi2S6wPZtLBofgbNCwA_eiYYtY5nBgr8_2EI/s1600/nki0032_hi+Ligans+Substitution.jpg width440/>br/>span classcaption>by Nick Kim, licensed from CartoonStock #332183/span>/div>div classclear>/div>/div>/div>/aside>/div>/div>/div>div styleclear: both>/div>!-- columns -->/div>!-- main -->/div>/div>div classmain-cap-bottom cap-bottom>div classcap-left>/div>div classcap-right>/div>/div>/div>footer>div classfooter-outer>div classfooter-cap-top cap-top>div classcap-left>/div>div classcap-right>/div>/div>div classfauxborder-left footer-fauxborder-left>div classfauxborder-right footer-fauxborder-right>/div>div classregion-inner footer-inner>div classfoot section idfooter-1>div classwidget HTML data-version1 idHTML4>div classwidget-content>script typetext/javascript>  var vglnk  { key: 359f53a4b2713efa7d26428241e0cb88 };  (function(d, t) {    var s  d.createElement(t); s.type  text/javascript; s.async  true;    s.src  //cdn.viglink.com/api/vglnk.js;    var r  d.getElementsByTagName(t)0; r.parentNode.insertBefore(s, r);  }(document, script));/script>/div>div classclear>/div>/div>div classwidget Text data-version1 idText1>h2 classtitle>ALD News Blog/h2>div classwidget-content>Probably The Best ALD news blog. 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blog.baldengineering.com	2024-12-29	77.111.240.75
www.blog.baldengineering.com	2026-02-12	142.250.73.147
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www.baldengineering.com	2024-12-06	77.111.240.75

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